Philips BUK219-50Y Technical data

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Philips Semiconductors Product Specification

TOPFET high side switch BUK220-50Y
SMD version of BUK219-50Y

DESCRIPTION QUICK REFERENCE DATA

Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT
protected power switch in
TOPFET2 technology assembled in I
a 5 pin plastic surface mount
package.

APPLICATIONS

General controller for driving I
lamps, motors, solenoids, heaters. T

L

SYMBOL PARAMETER MAX. UNIT

V

BG

L

j

R

ON

Nominal load current (ISO) 2 A

Continuous off-state supply voltage 50 V
Continuous load current 6 A
Continuous junction temperature 150 ˚C
On-state resistance Tj = 25˚C 180 mΩ

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting

STATUS

Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off

INPUT

CONTROL &

PROTECTION

CIRCUITS

of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection

GROUND

RG

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT426 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 Ground
2 Input
3 (connected to mb)
4 Status
5 Load

mb Battery

3

12 45

mb

Fig. 2. Fig. 3.

I

TOPFET

HSS

S

BATT

POWER
MOSFET

LOAD

B

L

G

July 2001 1 Rev 2.000

Philips Semiconductors Product Specification

TOPFET high side switch BUK220-50Y
SMD version of BUK219-50Y

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

BG

I

L

P

D

T

stg

T

j

T

sold

-V

BG

-V

BG

RI, R

II, I

S

II, I

S

E

BL

Continuous supply voltage 0 50 V
Continuous load current T

Total power dissipation T

114˚C - 6 A

mb ≤

25˚C - 41 W

mb ≤

Storage temperature -55 175 ˚C
Continuous junction temperature

1

- 150 ˚C

Mounting base temperature during soldering - 260 ˚C

Reverse battery voltages

2

Continuous reverse voltage - 16 V
Peak reverse voltage - 32 V

Application information

S

External resistors

3

to limit input, status currents 3.2 - kΩ

Input and status

Continuous currents -5 5 mA
Repetitive peak currents δ ≤ 0.1, tp = 300 µs -50 50 mA
Inductive load clamping IL = 1 A, VBG = 16 V
Non-repetitive clamping energy Tj = 150˚C prior to turn-off - 75 mJ

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R

th j-mb

1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold T

2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must

3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.

Junction to mounting base - - 2.5 3 K/W

to protect the switch.

limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
rating must be observed.

4

the over temperature trip operates

j(TO)

j

July 2001 2 Rev 2.000

Philips Semiconductors Product Specification

TOPFET high side switch BUK220-50Y
SMD version of BUK219-50Y

STATIC CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Clamping voltages

V
V

-V

-V

V

I

I

I
I

BG

BL

LG

LG

BG

B

L

G

L

Battery to ground IG = 1 mA 50 55 65 V
Battery to load IL = IG = 1 mA 50 55 65 V
Negative load to ground IL = 10 mA 18 23 28 V
Negative load voltage

1

IL = 1 A; tp = 300 µs202530V

Supply voltage battery to ground
Operating range

2

- 5.5 - 35 V

Currents 9 V ≤ VBG ≤ 16 V
Quiescent current

3

VLG = 0 V - - 20 µA

Tmb = 25˚C - 0.1 2 µA

Off-state load current

4

VBL = V

BG

--20µA

Tmb = 25˚C - 0.1 1 µA
Operating current
Nominal load current

5

6

IL = 0 A - 2 4 mA
VBL = 0.5 V 2 - - A

Resistances V

R

ON

On-state resistance

7

BG

9 to 35 V 1 A 300 µs 25˚C - 135 180 mΩ

I

L

t

p

T

mb

150˚C - - 330 mΩ

R

ON

On-state resistance 6 V 1 A 300 µs 25˚C - 170 225 mΩ

150˚C - - 410 mΩ

R

G

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

Internal ground resistance IG = 10 mA 95 150 190 Ω

July 2001 3 Rev 2.000