Philips BUK218-50DY Technical data
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Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DY
DESCRIPTION QUICK REFERENCE DATA
Monolithic dual channel high side SYMBOL PARAMETER MIN. UNIT
protected power switch in
TOPFET2 technology assembled in I
a 7 pin plastic surface mount
package.
APPLICATIONS
General purpose switch for driving I
automotive lamps, motors, T
solenoids, heaters. R
L
SYMBOL PARAMETER MAX. UNIT
V
BG
L
j
ON
Nominal load current (ISO) 8 A
Continuous off-state supply voltage 50 V
Continuous load current 16 A
Continuous junction temperature 150 ˚C
On-state resistance, Tj = 25˚C 40 mΩ
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
Off-state open circuit
load detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
INPUT 1
INPUT 2
STATUS
GROUND
CONTROL &
PROTECTION
CIRCUITS
RG
Fig.1. Elements of the TOPFET dual HSS with internal ground resistor.
PINNING - SOT427 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 load 1
2 ground
3 input 1
4 connected to mb
5 status
6 input 2
7 load 2
1234567
mb battery Fig. 2. Fig. 3.
mb
I1
I2
S
B
DUAL
HSTF
G
BATT
LOAD 1
LOAD 2
L1
L2
CONVENTION
Positive currents flow into pins, except for load and ground pins.
May 2001 1 Rev 1.400
Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DY
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
BG
I
L
P
D
T
stg
T
j
V
GB
V
GB
RI, R
I
I
I
S
I
I
I
S
Continuous supply voltage 0 50 V
Continuous load current per channel T
Total power dissipation T
135˚C - 8 A
mb ≤
25˚C - 83.3 W
mb ≤
Storage temperature -55 175 ˚C
Continuous junction temperature
Reverse battery voltages
1
2
-40 150 ˚C
Continuous reverse voltage - 16 V
Peak reverse voltage - 32 V
Application information
S
External resistors
3
to limit input, status currents 3.2 - kΩ
Input and status currents
Continuous input current -5 5 mA
Continuous status current -5 5 mA
Repetitive peak input current δ ≤ 0.1, tp = 300 µs -50 50 mA
Repetitive peak status current δ ≤ 0.1, tp = 300 µs -50 50 mA
Inductive load clamping VBG = 13 V, IL = 8 A
E
BL
Non-repetitive clamping energy (one Tj = 150˚C prior to turn-off - 150 mJ
channel)
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold T
2 Reverse battery voltage is allowed only with external resistors to ensure that the input and status currents do not exceed the limiting values.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
May 2001 2 Rev 1.400
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
the over temperature trip operates
to protect the switch.
The internal ground resistor limits the reverse battery ground current. The connected loads must limit the reverse load currents. Power
is dissipated and the Tj rating must be observed.
j(TO)
Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DY
THERMAL CHARACTERISTIC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
1
R
th j-mb
Junction to mounting base per channel - 2.4 3 K/W
both channels - 1.2 1.5 K/W
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
V
BG
V
BL
V
GL
V
BG
I
B
I
L
I
G
I
L
Battery to ground IG = 1 mA 45 55 65 V
Battery to load per channel IL = IG = 1 mA 50 55 65 V
Ground to load
2
IL = 10 mA 18 23 28 V
IL = 10 A; tp = 300 µs202530V
Supply voltage battery to ground
Operating range
3
- 5.5 - 35 V
Currents 9 V ≤ VBG ≤ 35 V
Total quiescent current
4
VLG = 0 V - - 20 µA
Tmb = 25˚C - 0.1 1 µA
Off-state load current per VBL = V
BG
--10µA
channel Tmb = 25˚C - 0.1 1 µA
Operating current one channel on - 1.8 3 mA
both channels on - 3.6 6 mA
Nominal load current
5
VBL = 0.5 V; Tmb = 85˚C 8 - - A
R
G
R
ON
Effective internal ground IG = -200 mA; tp = 300 µs 40 75 100 Ω
resistance
Resistances per channel V
6
BG
I
L
7
t
p
T
j
On-state resistance 9 to 35 V 10 A 300 µs 25˚C - 30 40 mΩ
150˚C - 60 80 mΩ
R
ON
On-state resistance 5.5 V 5 A 300 µs 25˚C - 50 60 mΩ
150˚C - 100 120 mΩ
1 Of the output Power MOS transistors.
2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
3 On-state resistance is increased if the supply voltage is less than 7 V.
4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.
5 Per channel but with both channels conducting. Defined as in ISO 10483-1.
6 Equivalent of the parallel connected resistors for both channels.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
is clamped by the device.
May 2001 3 Rev 1.400
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