Philips BUK217-50YT Technical data

BUK217-50YT

Philips Semiconductors Product specification

TOPFET high side switch

BUK217-50YT

SMD version

DESCRIPTION

QUICK REFERENCE DATA

Monolithic single channel high side

SYMBOL

PARAMETER

MAX.

UNIT

protected power switch in

TOPFET2 technology assembled in

VBG

Continuous off-state supply voltage

50

V

a 5 pin plastic surface mount

package.

IL

Continuous load current

10

A

APPLICATIONS

Tj

Continuous junction temperature

150

˚C

General controller for driving

RON

On-state resistance

Tj = 25˚C

14

mΩ

lamps, motors, solenoids, heaters.

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Latched overtemperature protection

Load current limiting at reduced level

Short circuit load detection Overvoltage and undervoltage shutdown with hysteresis Diagnostic status indication Voltage clamping for turn off of inductive loads

ESD protection on all pins Reverse battery, overvoltage and transient protection

		BATT
	STATUS
		POWER
	INPUT	MOSFET
		CONTROL &
		PROTECTION
		CIRCUITS
		LOAD
	GROUND	RG

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT426

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1Ground

2Input

3(connected to mb)

4Status

5Load

mb Battery

	mb
	I	B
		TOPFET L
	S	HSS
		G
3

1 2

4

5

Fig. 2.

Fig. 3.

September 2001

1

Rev 1.300

Philips Semiconductors Product specification

TOPFET high side switch						BUK217-50YT
SMD version
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL	PARAMETER		CONDITIONS	MIN.		MAX.				UNIT
VBG	Continuous off-state supply voltage			0			50			V
IL	Continuous load current		Tmb ≤ 140˚C	-			10			A
PD	Total power dissipation		Tmb ≤ 25˚C	-		115				W
Tstg	Storage temperature			-55		175				˚C
T	Continuous junction temperature1			-		150				˚C
j
Tsold	Mounting base temperature		during soldering	-		260				˚C
	Reverse battery voltages2
-VBG	Continuous reverse voltage			-			16			V
-VBG	Peak reverse voltage			-			32			V
	Application information
RI, RS	External resistors3		to limit input, status currents	3.2			-			kΩ
	Input and status
II, IS	Continuous currents			-5			5			mA
II, IS	Repetitive peak currents		δ ≤ 0.1, tp = 300 µ s	-50			50			mA
	Inductive load clamping		IL = 10 A, VBG = 16 V
EBL	Non-repetitive clamping energy		Tj = 150˚C prior to turn-off	-		460				mJ
ESD LIMITING VALUE
SYMBOL	PARAMETER		CONDITIONS	MIN.		MAX.				UNIT
VC	Electrostatic discharge capacitor		Human body model;	-			2			kV
	voltage		C = 250 pF; R = 1.5 kΩ
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.			MAX.		UNIT
	Thermal resistance4
Rth j-mb	Junction to mounting base	-		-	0.86			1.08		K/W

1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.

2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj rating must be observed.

3 To limit currents during reverse battery and transient overvoltages (positive or negative).

4 Of the output power MOS transistor.

September 2001

2

Rev 1.300

Philips Semiconductors Product specification

TOPFET high side switch

BUK217-50YT

SMD version

STATIC CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Clamping voltages

VBG

Battery to ground

IG = 1 mA

50

55

65

V

VBL

Battery to load

IL = IG = 1 mA

50

55

65

V

-VLG

Negative load to ground

IL = 10 mA

18

23

28

V

-VLG

Negative load voltage1

IL = 20 A; tp = 300 µ s

20

25

30

V

Supply voltage

battery to ground

V

Operating range2

5.5

-

35

V

BG

Currents

9 V ≤ VBG ≤

16 V

IB

Quiescent current3

VLG = 0 V

-

-

20

µ

A

Tmb = 25˚C

-

0.1

2

µ

A

IL

Off-state load current4

VBL = VBG

-

-

20

µ

A

Tmb = 25˚C

-

0.1

1

µ

A

I

Operating current5

I

= 0 A

-

2

4

mA

G

L

I

Nominal load current6

V

= 0.5 V

T

= 85˚C

-

-

-

A

L

BL

mb

Resistances

V

I

t 7

T

BG

L

p

mb

RON

On-state resistance

9 to 35 V

5 A

300 µ s

25˚C

-

10

14

mΩ

150˚C

-

-

25

mΩ

RON

On-state resistance

6 V

5 A

300 µ s

25˚C

-

13

18

mΩ

150˚C

-

-

33

mΩ

Ω

RG

Internal ground resistance

IG = 10 mA

95

150

190

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.

2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.

3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.

4 The measured current is in the load pin only.

5 This is the continuous current drawn from the supply with no load connected, but with the input high.

6 Defined as in ISO 10483-1. Because of current limiting, this parameter is not applicable.

7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

September 2001

3

Rev 1.300