Philips BUK208-50Y, BUK213-50Y Technical data

BUK212-50Y

BUK212-50Y; BUK217-50Y

Single channel high-side TOPFET™

Rev. 01 — 17 March 2003

Product data

1.Product profile

1.1Description

Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic package.

Product availability:

BUK212-50Y in SOT263B-01

BUK217-50Y in SOT426 (D2-PAK).

1.2Features

■Very low quiescent current

■Power TrenchMOS™

■Overtemperature protection

■Over and undervoltage protection

■Reverse battery protection

■Low charge pump noise

■Loss of ground protection

■CMOS logic capability

■Negative load clamping

■Overload protection

■ESD protection for all pins

■Diagnostic status indication

■Operating voltage down to 5.5 V

■Current limitation.

1.3 Applications

■12 V and 24 V grounded loads

■Inductive loads

■High inrush current loads

■Replacement for relays and fuses.

1.4 Quick reference data

Table 1:	Quick reference data
Symbol	Parameter	Min	Max	Unit
RBLon	battery-load on-state resistance	-	14	mΩ
IL	load current	-	44	A
IL(nom)	nominal load current (ISO)	25	-	A
IL(lim)	self-limiting load current	47	100	A
VBG(oper)	battery-ground operating voltage	5.5	35	V

Philips Semiconductors	BUK212-50Y; BUK217-50Y
	Single channel high-side TOPFET™

2. Pinning information

mb	mb
				B
				S
1 2 3 4 5		I	P	L
1	5	03pa56	G
MBL431		MBL264

Fig 1. Pinning; SOT426 (D2-PAK).

Fig 2. Pinning; SOT263B-01.

Fig 3. Symbol; (HSS) TOPFETTM.

2.1 Pin description

Table 2:	Pin description
Symbol	Pin	I/O		Description
G	1	-		circuit common ground
I	2	I		input
B	3	-	[1] [2]	battery
S	4	O		status
L	5	O		load
-	mb	-	[2]	mounting base

[1]It is not possible to make a connection to pin 3 of the SOT426 package.

[2]The battery is connected to the mounting base.

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© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data

Rev. 01 — 17 March 2003

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Philips Semiconductors	BUK212-50Y; BUK217-50Y
	Single channel high-side TOPFET™

3. Block diagram

				battery	3/mb
status		VOLTAGE REGULATOR
4
		CHARGE PUMP
				POWER
		SHORT CIRCUIT	CURRENT LIMIT	MOSFET
		PROTECTION
		OVERVOLTAGE
		PROTECTION
input	CONTROL	UNDERVOLTAGE
2	LOGIC	PROTECTION
		LOW CURRENT		load	5
		DETECT
		TEMPERATURE
		SENSOR
				03pa33
ground			RG
1

Fig 4. Elements of the high-side TOPFET switch.

4. Functional description

Table 3: Truth table

Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;

UV = undervoltage; OV = overvoltage; LC = low current or open circuit load; SC = short circuit; OT = overtemperature [1].

Input	Supply			Load		Load	Status	Operating mode
	UV	OV	LC	SC	OT	output
L	X	X	X	X	X	OFF	H	off
H	0	0	0	0	0	ON	H	on & normal
H	0	0	1	0	0	ON	L	on & low current detect
H	1	0	X	X	X	OFF	H	supply undervoltage lockout
H	0	1	X	0	0	OFF	H	supply overvoltage shutdown
H	0	0	0	1	X	OFF	L	SC tripped
H	0	0	0	0	1	OFF	L	OT shutdown

[1]The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold. See “Overtemperature protection” characteristics in Table 6.

9397 750 10768

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data

Rev. 01 — 17 March 2003

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Philips Semiconductors	BUK212-50Y; BUK217-50Y
	Single channel high-side TOPFET™

5. Limiting values

Table 4: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions		Min	Max	Unit
VBG	battery-ground supply voltage			-	50	V
IL	load current	Tmb ≤ 90 °C		-	44	A
Ptot	total power dissipation	Tmb ≤ 25 °C		-	115	W
Tstg	storage temperature			−55	+175	°C
Tj	junction temperature			-	+150	°C
Tmb	mounting base temperature	during soldering (≤ 10 s)		-	260	°C
Reverse battery voltage
VBGR	reverse battery-ground supply		[1]	-	16	V
	voltage
VBGRR	repetitive reverse battery-ground			-	32	V
	supply voltage
External resistor
RI	input resistor		[2]	3.3	-	kΩ
RS	status resistor		[3]	3.3	-	kΩ
Input current
II	input current			−5	+5	mA
IIRM	repetitive peak input current	δ ≤ 0.1; tp = 300 μs		−50	+50	mA
Status current
IS	status current			−5	+5	mA
ISRM	repetitive peak status current	δ ≤ 0.1; tp = 300 μs		−50	+50	mA
Inductive load clamping
EBL(CL)S	non-repetitive battery-load	Tj = 150 °C prior to turn-off; IL = 20 A		-	460	mJ
	clamping energy
Electrostatic discharge
Vesd	electrostatic discharge voltage	Human body model; C = 100 pF;		-	2	kV
		R = 1.5 kΩ

[1]Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse current. The internal ground resistor limits the reverse battery ground current.

[2]To limit input current during reverse battery and transient overvoltages.

[3]To limit status current during reverse battery and transient overvoltages.

6. Thermal characteristics

Table 5:	Thermal characteristics
Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Rth(j-mb)	thermal resistance from junction to		-	0.86	1.08	K/W
	mounting base

Rth(j-a)	thermal resistance from junction to
	ambient

mounted on printed circuit board;	-	50	-	K/W
minimum footprint; SOT426

9397 750 10768

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data

Rev. 01 — 17 March 2003

4 of 16

Philips Semiconductors	BUK212-50Y; BUK217-50Y
	Single channel high-side TOPFET™

7. Static characteristics

Table 6: Static characteristics

Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.

Symbol	Parameter	Conditions		Min	Typ	Max	Unit
Clamping voltage
VBG(CL)	battery-ground clamping voltage	IG = 1 mA; Figure 6		50	55	65	V
VBL(CL)	battery-load clamping voltage	IL = IG = 1 mA		50	55	65	V
VLG(CL)	load-ground clamping voltage	IL = 10 mA; Figure 12 and 14		−18	−23	−28	V
		IL = 20 A; tp = 300 μs	[1]	−20	−25	−30	V
Supply voltage
VBG(oper)	battery-ground operating voltage			5.5	-	35	V
Current
IB	battery quiescent current	VLG = 0 V; Figure 10	[2]
		Tmb = 150 °C		-	-	20	μA
		Tmb = 25 °C		-	0.1	2	μA
IL(off)	off-state load current	VBL = VBG
		Tmb = 150 °C		-	-	20	μA
		Tmb = 25 °C		-	0.1	1	μA
IG(on)	operating current	Figure 6		-	2	4	mA
IL(nom)	nominal load current (ISO)	VBL = 0.5 V; Tmb = 85 °C	[3]	25	-	-	A
Resistance [4]
RBLon	battery-load on-state resistance	9 V ≤ VBG ≤ 35 V; IL = 20 A; Figure 5
		Tmb = 25 °C		-	10	14	mΩ
		Tmb = 150 °C		-	-	25	mΩ
		VBG = 6 V; IL = 20 A
		Tmb = 25 °C		-	13	18	mΩ
		Tmb = 150 °C		-	-	33	mΩ
RG	ground resistance	IG = 10 mA	[5]	95	150	190	Ω
Input [6]
II	input current	VIG = 5 V		20	90	160	μA
VIG(CL)	input-ground clamping voltage	II = 200 μA		5.5	7	8.5	V
VIG(on)	input-ground turn-on voltage	Figure 9		-	2.4	3	V
VIG(off)	input-ground turn-off voltage			1.5	2.1	-	V
VIG(on)(hys)	input-ground turn-on hysteresis			-	0.3	-	V
II(on)	input turn-on current	VIG = 3 V		-	-	100	μA
II(off)	input turn-off current	VIG = 1.5 V		10	-	-	μA
Low current detection [7][10]
IL(LC)	load low current detect	−40 °C ≤ Tmb ≤ +150 °C		0.55	-	4.4	A
		Tmb = 25 °C; Figure 15		0.65	1.8	2.9	A
IL(LC)(hys)	load low current detect hysteresis			-	0.44	-	A

9397 750 10768

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data

Rev. 01 — 17 March 2003

5 of 16