Philips BUK208-50Y, BUK213-50Y Technical data

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1. Product profile

1.1 Description

BUK212-50Y; BUK217-50Y

Single channel high-side TOPFET™

Rev. 01 — 17 March 2003 Product data

Monolithic temperature and overload protected single high-side power switch based
on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic
package.

Product availability:

BUK212-50Y in SOT263B-01
BUK217-50Y in SOT426 (D2-PAK).

1.2 Features

■ Very low quiescent current ■ CMOS logic capability

■ Power TrenchMOS™ ■ Negative load clamping

■ Overtemperature protection ■ Overload protection

■ Over and undervoltage protection ■ ESD protection for all pins

■ Reverse battery protection ■ Diagnostic status indication

■ Low charge pump noise ■ Operating voltage down to 5.5 V

■ Loss of ground protection ■ Current limitation.

1.3 Applications

■ 12 V and 24 V grounded loads ■ High inrush current loads

■ Inductive loads ■ Replacement for relays and fuses.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Min Max Unit

R

BLon

I

L

I

L(nom)

I

L(lim)

V

BG(oper)

battery-load on-state resistance - 14 mΩ
load current - 44 A
nominal load current (ISO) 25 - A
self-limiting load current 47 100 A
battery-ground operating voltage 5.5 35 V

Philips Semiconductors

2. Pinning information

BUK212-50Y; BUK217-50Y

Single channel high-side TOPFET™

12 43mb5

MBL431

mb

15

MBL264

I

03pa56

B

S

P

G

L

Fig 1. Pinning; SOT426 (D2-PAK). Fig 2. Pinning; SOT263B-01. Fig 3. Symbol; (HSS) TOPFETTM.

2.1 Pin description

Table 2: Pin description

Symbol Pin I/O Description

G 1 - circuit common ground
I 2 I input
B3-

[1] [2]

S 4 O status
L 5 O load

-mb-

[2]

battery

mounting base

[1] It is not possible to make a connection to pin 3 of the SOT426 package.
[2] The battery is connected to the mounting base.

9397 750 10768

Product data Rev. 01 — 17 March 2003 2 of 16

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

3. Block diagram

BUK212-50Y; BUK217-50Y

Single channel high-side TOPFET™

battery

status

4

input

2

ground

1

CONTROL

LOGIC

VOLTAGE REGULATOR

CHARGE PUMP

SHORT CIRCUIT

PROTECTION

OVERVOLTAGE

PROTECTION

UNDERVOLTAGE

PROTECTION

LOW CURRENT

DETECT

TEMPERATURE

SENSOR

CURRENT LIMIT

R

G

03pa33

POWER

MOSFET

load

3/mb

5

Fig 4. Elements of the high-side TOPFET switch.

4. Functional description

Table 3: Truth table

Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; LC = low current or open circuit load; SC = short circuit; OT = overtemperature

Input Supply Load Load

UV OV LC SC OT

output

Status Operating mode

L XXXXXOFFHoff
H 00000ONHon & normal
H 00100ONLon & low current detect
H 1 0 X X X OFF H supply undervoltage lockout
H 0 1 X 0 0 OFF H supply overvoltage shutdown
H 0001XOFFLSC tripped
H 00001OFFLOT shutdown

[1] The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold.

See “Overtemperature protection” characteristics in Table 6.

9397 750 10768

Product data Rev. 01 — 17 March 2003 3 of 16

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

[1]

.

Philips Semiconductors

BUK212-50Y; BUK217-50Y

Single channel high-side TOPFET™

5. Limiting values

Table 4: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

BG

I

L

P

tot

T

stg

T

j

T

mb

Reverse battery voltage

V

BGR

V

BGRR

External resistor

R

I

R

S

Input current

I

I

I

IRM

Status current

I

S

I

SRM

Inductive load clamping

E

BL(CL)S

Electrostatic discharge

V

esd

battery-ground supply voltage - 50 V
load current Tmb≤ 90 °C - 44 A
total power dissipation Tmb≤ 25 °C - 115 W
storage temperature −55 +175 °C
junction temperature - +150 °C
mounting base temperature during soldering (≤ 10 s) - 260 °C

reverse battery-ground supply

[1]

-16V

voltage
repetitive reverse battery-ground

-32V

supply voltage

input resistor
status resistor

[2]

3.3 - kΩ

[3]

3.3 - kΩ

input current −5+5mA
repetitive peak input current δ≤0.1; tp= 300 µs −50 +50 mA

status current −5+5mA
repetitive peak status current δ≤0.1; tp= 300 µs −50 +50 mA

non-repetitive battery-load

Tj= 150 °C prior to turn-off; IL= 20 A - 460 mJ

clamping energy

electrostatic discharge voltage Human body model; C = 100 pF;

-2kV

R = 1.5 kΩ

[1] Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load

must limit the reverse current. The internal ground resistor limits the reverse battery ground current.
[2] To limit input current during reverse battery and transient overvoltages.
[3] To limit status current during reverse battery and transient overvoltages.

6. Thermal characteristics

Table 5: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

thermal resistance from junction to
mounting base

R

th(j-a)

9397 750 10768

Product data Rev. 01 — 17 March 2003 4 of 16

thermal resistance from junction to
ambient

mounted on printed circuit board;
minimum footprint; SOT426

- 0.86 1.08 K/W

- 50 - K/W

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

BUK212-50Y; BUK217-50Y

Single channel high-side TOPFET™

7. Static characteristics

Table 6: Static characteristics

Limits are valid for−40°C≤T

Symbol Parameter Conditions Min Typ Max Unit

Clamping voltage

V

BG(CL)

V

BL(CL)

V

LG(CL)

battery-ground clamping voltage IG= 1 mA; Figure 6 50 55 65 V
battery-load clamping voltage IL=IG= 1 mA 50 55 65 V
load-ground clamping voltage IL= 10 mA; Figure 12 and 14 −18 −23 −28 V

Supply voltage

V

BG(oper)

battery-ground operating voltage 5.5 - 35 V

Current

I

B

I

L(off)

I

G(on)

I

L(nom)

Resistance

R

BLon

R

G

Input

I

I

V

IG(CL)

V

IG(on)

V

IG(off)

V

IG(on)(hys)

I

I(on)

I

I(off)

Low current detection

I

L(LC)

I

L(LC)(hys)

battery quiescent current VLG=0V;Figure 10

off-state load current VBL=V

operating current Figure 6 - 24mA
nominal load current (ISO) VBL= 0.5 V; Tmb=85°C

[4]

battery-load on-state resistance 9 V ≤ VBG≤ 35 V; IL=20A;Figure 5

ground resistance IG=10mA

[6]

input current VIG= 5 V 20 90 160 µA
input-ground clamping voltage II= 200 µA 5.5 7 8.5 V
input-ground turn-on voltage Figure 9 - 2.4 3 V
input-ground turn-off voltage 1.5 2.1 - V
input-ground turn-on hysteresis - 0.3 - V
input turn-on current VIG=3V - - 100 µA
input turn-off current VIG= 1.5 V 10 - - µA

[7][10]

load low current detect −40 °C ≤ Tmb≤ +150 °C 0.55 - 4.4 A

load low current detect hysteresis - 0.44 - A

≤

+150°C and typical values for Tmb=25°C unless otherwise specified.

mb

= 20 A; tp= 300 µs

I

L

[1]

−20 −25 −30 V

[2]

Tmb= 150 °C --20µA

=25°C - 0.1 2 µA

T

mb

BG

Tmb= 150 °C --20µA

=25°C - 0.1 1 µA

T

mb

[3]

25--A

=25°C - 10 14 mΩ

T

mb

= 150 °C --25mΩ

T

mb

=6V; IL=20A

V

BG

=25°C - 13 18 mΩ

T

mb

= 150 °C --33mΩ

T

mb

[5]

95 150 190 Ω

=25°C; Figure 15 0.65 1.8 2.9 A

T

mb

9397 750 10768

Product data Rev. 01 — 17 March 2003 5 of 16

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.