Philips BUK200-50Y Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK200-50Y
TOPFET high side switch

DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MIN. UNIT
overload protected power switch
based on MOSFET technology in a I
5 pin plastic envelope, configured

L

as a single high side switch.

SYMBOL PARAMETER MAX. UNIT

APPLICATIONS

V
General controller for driving I
lamps, motors, solenoids, heaters. T

BG

L

j

R

ON

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection ­self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection Fig.1. Elements of the TOPFET HSS with internal ground resistor.

STATUS

INPUT

GROUND

Nominal load current (ISO) 3.5 A

Continuous off-state supply voltage 50 V
Continuous load current 10 A
Continuous junction temperature 150 ˚C
On-state resistance 100 mΩ

BATT

POWER
MOSFET

CONTROL &

PROTECTION

CIRCUITS

LOAD

RG

PINNING - SOT263 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 Ground
2 Input
3 Battery (+ve supply)
4 Status
5 Load

tab connected to pin 3

April 1995 1 Rev 1.000

tab

12345

leadform

263-01

Fig. 2. Fig. 3.

I

TOPFET

HSS

S

B

L

G

Philips Semiconductors Product specification

PowerMOS transistor BUK200-50Y
TOPFET high side switch

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Battery voltages

V

-V

-V

BG

BG

BG

Continuous off-state supply voltage - 0 50 V

Reverse battery voltages

1

External resistors:
Repetitive peak supply voltage RI = RS ≥ 4.7 kΩ, δ ≤ 0.1 - 32 V
Continuous reverse supply voltage RI = RS ≥ 4.7 kΩ -16V

I

L

P

D

T

stg

T

j

T

sold

Continuous load current T
Total power dissipation T

115 ˚C - 10 A

mb ≤

25 ˚C - 62.5 W

mb ≤

Storage temperature - -55 175 ˚C
Continuous junction temperature

2

- - 150 ˚C

Lead temperature during soldering - 250 ˚C

Input and status

I

I

I

S

I

I

I

S

Continuous input current - -5 5 mA
Continuous status current - -5 5 mA

Repetitive peak input current δ ≤ 0.1 -20 20 mA
Repetitive peak status current δ ≤ 0.1 -20 20 mA

Inductive load clamping

E

BL

Non-repetitive clamping energy Tmb = 150 ˚C prior to turn-off - 1.2 J

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R

th j-mb

R

th j-a

1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold T

3 Of the output Power MOS transistor.

Junction to mounting base - - 1.5 2 K/W
Junction to ambient in free air - 60 75 K/W

to protect the switch.

April 1995 2 Rev 1.000

3

the over temperature trip operates

j(TO)

Philips Semiconductors Product specification

PowerMOS transistor BUK200-50Y
TOPFET high side switch

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Clamping voltages

V
V

-V

V

I
I
I
I

BG

BL

LG

BG

L

B

G

L

Battery to ground IG = 1 mA 50 55 65 V
Battery to load IL = IG = 1 mA 50 55 65 V
Negative load to ground IL = 1 mA 12 17 21 V

Supply voltage battery to ground
Operating range

1

-5-40V

Currents VBG = 13 V
Nominal load current
Quiescent current
Operating current
Off-state load current

2

3

4

5

VBL = 0.5 V; Tmb = 85 ˚C 3.5 - - A
VIG = 0 V; VLG = 0 V - 0.1 2 µA
VIG = 5 V; IL = 0 A 1.5 2.2 4 mA
VBL = 13 V; VIG = 0 V - 0.1 1 µA

Resistances

R

ON

R

ON

R

G

On-state resistance
On-state resistance VBG = 5 V; IL = 1 A; tp = 300 µs - 116 150 mΩ
Internal ground resistance IG = 10 mA - 150 - Ω

6

VBG = 13 V; IL = 5 A; tp = 300 µs - 77 100 mΩ

INPUT CHARACTERISTICS

Tmb = 25 ˚C; VBG = 13 V

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

I

V

IG

V

IG(ON)

V

IG(OFF)

Input current VIG = 5 V 35 60 100 µA
Input clamping voltage II = 200 µA 6 7.5 8.5 V
Input turn-on threshold voltage - 2.1 2.7 V
Input turn-off threshold voltage 1.5 2 - V

1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

April 1995 3 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK200-50Y
TOPFET high side switch

PROTECTION FUNCTIONS AND STATUS INDICATIONS

Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.

FUNCTIONS TRUTH TABLE THRESHOLD

SYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT

Normal on-state 1 1 1
Normal off-state 0 1 0

I

L(OC)

T

j(TO)

V

BL(TO)

V

BG(TO)

V

BG(LP)

Open circuit load
Open circuit load 0 1 0
Over temperature
Over temperature
Short circuit load
Short circuit load 0 1 0
Low supply voltage
High supply voltage

For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care.
For status ‘0’ equals low, ‘1’ equals open or high.
For output switch ‘0’ equals off, ‘1’ equals on.

1

2

3

4

5

6

1 0 1 50 200 350 mA

1 0 0 150 175 - ˚C
00 0
1 0 0 8.5 10.3 12 V

X1 0345V
X1 0404550V

STATUS CHARACTERISTICS

Tmb = 25 ˚C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

SG

V

SG

I

S

I

S

R

S

1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication

2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by

3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,

4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V.
6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V.
7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8 The pull-up resistor also protects the status pin during reverse battery conditions.

Status clamping voltage IS = 100 µA; VIG = 0 V 6 7 8 V
Status low voltage IS = 50 µA; VBG = 13 V; VIG = 5 V - 0.7 0.8 V
Status leakage current VSG = 5 V - 0.1 1 µA
Status saturation current

7

VSS = 5 V; RS = 0 Ω; VBG = 13 V - 5 - mA

Application information

External pull-up resistor

only. Typical hysteresis equals 80 mA. The thresholds are specified for supply voltage within the normal working range.

typically 10 ˚C.

providing the device has not cooled below the reset temperature.

8

VSS = 5 V - 100 - kΩ

April 1995 4 Rev 1.000