Philips BUK1M200-50SDLD Technical data

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BUK1M200-50SDLD

Quad channel TOPFET™

Rev. 01 — 02 April 2003 Product data

1. Product profile

1.1 Description

Quad temperature and overload protected logic level power MOSFET in TOPFET™
technology in a 20-pin surface mount plastic package.

Product availability:

BUK1M200-50SDLD in SOT163-1 (SO20).

1.2 Features

■ Power TrenchMOS™ ■ 5 V logic compatible input level

■ Overtemperature protection ■ Current limiting

■ Overload protection ■ ESD protection for all pins

■ Input-source voltage resets latched

protection circuitry.

■ Input used to control output stage and

supply overload protection circuits

■ Overfatigue clamping for turn off of

inductive loads

■ Low operating input current permits

direct drive by micro-controller.

1.3 Applications

■ Low-side driver ■ DC switching

■ Low frequency Pulse Width

Modulation

■ General purpose switch for driving

lamps, motors, solenoids and heaters.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Min Max Unit

R

DSon

P

tot

T

j

V

DS

[1] All devices active

drain-source on-state resistance - 200 mΩ
total power dissipation
junction temperature - 150 °C
drain-source voltage - 50 V

[1]

- 9.4 W

Philips Semiconductors

2. Pinning information

BUK1M200-50SDLD

Quad channel TOPFET™

book, halfpage

20

110

Top view

MGX361

11

D1I1

P

S1

D2I2

P

S2

D3I3

P

S3

Fig 1. Pinning; SOT163-1 (SO20). Fig 2. Symbol; Quad channel low-side TOPFET

2.1 Pin description

Table 2: Pin description

Symbol Pin Description

n.c. 1, 11, 10, 20 not connected
D1 2,19 drain 1
I1 3 input 1
D2 4,17 drain 2
I2 5 input 2
D3 6,15 drain 3
I3 7 input 3
D4 8, 13 drain 4
I4 9 input 4
S4 12 source 4
S3 14 source 3
S2 16 source 2
S1 18 source 1

D4I4

P

S4

MBL801

TM

9397 750 10956

Product data Rev. 01 — 02 April 2003 2 of 14

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

3. Block diagram

BUK1M200-50SDLD

Quad channel TOPFET™

2,19

CHANNEL 1

I1

3

SHORT CIRCUIT

VOLTAGE

REGULATOR

5

I2

7

I3

9

I4

PROTECTION

TEMPERATURE

R

OVER

CHANNEL 2

internal circuitry

identical to

CHANNEL1

CHANNEL 3

internal circuitry

identical to

CHANNEL1

CHANNEL 4

internal circuitry

identical to

CHANNEL1

IG

OVER

VOLTAGE

CONTROL

LOGIC

18

gate sense

CROWBAR

AND

CURRENT

LIMIT

4,17

16

6,15

14

8,13

12

D1

S1

D2

S2

D3

S3

D4

S4

BUK1M200-50SDLD

03pb05

Fig 3. Elements of the quad channel TOPFET switch.

9397 750 10956

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data Rev. 01 — 02 April 2003 3 of 14

Philips Semiconductors

BUK1M200-50SDLD

Quad channel TOPFET™

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V
I
P
I
T
T

DS

I

tot

IMS

stg
j

drain-source voltage
input current clamping - 3 mA
total power dissipation Tsp≤ 25 °C; Figure 4
non-repetitive peak input current tp≤ 1 ms - 10 mA
storage temperature −55 +150 °C
junction temperature normal operation

Overvoltage clamping

E

DS(CL)S

non-repetitive drain-source
clamping energy

E

DS(CL)R

repetitive drain-source clamping
energy

Overload protection

V

DS(prot)

protected drain-source voltage VIS≥ 4V - 35 V

[6]

Reverse diode

I

S

source (diode forward) current Tsp≤ 25 °C; VIS=0V - 2 A

Electrostatic discharge

V

esd

electrostatic discharge voltage C = 250 pF; R = 1.5 kΩ -2kV

[4]

T

=25°C; IDM≤ I

amb

(refer to Table 5);

D(lim)

inductive load
Tsp≤ 125 °C; IDM= 50 mA; f = 250 Hz

[1]

-50V

[2]

- 9.4 W

[3]

- 150 °C

[5]

- 100 mJ

[5]

-5mJ

[1] Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
[2] For all devices active.
[3] Not in an overload condition with drain current limiting.
[4] At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
[5] Single active device.
[6] With the protectionsupply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by

means of drain current limiting and by activating the overtemperature protection.

9397 750 10956

Product data Rev. 01 — 02 April 2003 4 of 14

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

BUK1M200-50SDLD

Quad channel TOPFET™

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×=

03aa17

Tsp (°C)

Fig 4. Normalized total power dissipation as a function of solder point temperature.

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

thermal resistancefrom junction to
solder point.

mounted on thermo clad board

one device active - - 45 K/W
all devices active - - 13.3 K/W

9397 750 10956

Product data Rev. 01 — 02 April 2003 5 of 14

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.