BUK148-50DL
Philips Semiconductors |
Product specification |
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Logic level TOPFET |
BUK148-50DL |
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DESCRIPTION |
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QUICK REFERENCE DATA |
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Monolithic temperature and |
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PARAMETER |
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MAX. |
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UNIT |
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overload protected logic level power |
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MOSFET in TOPFET2 technology |
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VDS |
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Continuous drain source voltage |
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50 |
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V |
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assembled in a 3 pin plastic |
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ID |
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Continuous drain current |
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8 |
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A |
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package. |
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PD |
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Total power dissipation |
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40 |
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W |
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APPLICATIONS |
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Tj |
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Continuous junction temperature |
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150 |
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˚C |
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RDS(ON) |
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Drain-source on-state resistance |
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100 |
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mΩ |
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General purpose switch for driving |
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IISL |
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Input supply current |
VIS = 5 V |
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650 |
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µA |
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lamps |
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motors |
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solenoids |
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heaters |
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in automotive systems and other |
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applications. |
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FEATURES |
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FUNCTIONAL BLOCK DIAGRAM |
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TrenchMOS output stage |
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Current limiting |
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DRAIN |
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Overload protection |
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Overtemperature protection |
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Protection latched reset by input |
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5 V logic compatible input level |
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O / V |
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Control of output stage and |
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CLAMP |
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supply of overload protection |
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POWER |
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circuits derived from input |
INPUT |
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MOSFET |
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Low operating input current |
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RIG |
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permits direct drive by |
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micro-controller |
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ESD protection on all pins |
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LOGIC AND |
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Overvoltage clamping for turn |
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PROTECTION |
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off of inductive loads |
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SOURCE |
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Fig.1. Elements of the TOPFET. |
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PINNING - SOT226 |
PIN CONFIGURATION |
SYMBOL |
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PIN |
DESCRIPTION |
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tab |
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D |
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TOPFET |
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1 |
input |
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2 |
drain |
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I |
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P |
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3 |
source |
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tab |
drain |
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S |
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1 |
2 |
3 |
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May 2001 |
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1 |
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Rev 1.100 |
Philips Semiconductors |
Product specification |
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Logic level TOPFET |
BUK148-50DL |
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LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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V |
Continuous drain source voltage1 |
- |
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50 |
V |
DS |
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ID |
Continuous drain current |
VIS = 5 V; Tmb = 25 ˚C |
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self - |
A |
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VIS = 5 V; Tmb ≤ 110 ˚C |
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limited |
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ID |
Continuous drain current |
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8 |
A |
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II |
Continuous input current |
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≤ 1 ms |
-5 |
5 |
mA |
IIRM |
Non-repetitive peak input current |
tp |
-10 |
10 |
mA |
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PD |
Total power dissipation |
Tmb |
≤ 25 ˚C |
- |
40 |
W |
Tstg |
Storage temperature |
- |
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-55 |
175 |
˚C |
T |
Continuous junction temperature2 |
normal operation |
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150 |
˚C |
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j |
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Tsold |
Case temperature |
during soldering |
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260 |
˚C |
ESD LIMITING VALUE
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VC |
Electrostatic discharge capacitor |
Human body model; |
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2 |
kV |
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voltage |
C = 250 pF; R = 1.5 kΩ |
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OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Inductive load turn-off |
IDM = 8 A; VDD ≤ 20 V |
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EDSM |
Non-repetitive clamping energy |
Tmb ≤ 25 |
˚C |
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100 |
mJ |
EDRM |
Repetitive clamping energy |
Tmb ≤ 95 |
˚C; f = 250 Hz |
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20 |
mJ |
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load.
SYMBOL |
PARAMETER |
REQUIRED CONDITION |
MIN. |
MAX. |
UNIT |
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VDS |
Drain source voltage3 |
4 V ≤ VIS ≤ 5.5 V |
0 |
35 |
V |
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Thermal resistance |
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Rth j-mb |
Junction to mounting base |
- |
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2.5 |
3.1 |
K/W |
Rth j-a |
Junction to ambient |
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50 |
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K/W |
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001 |
2 |
Rev 1.100 |