Philips BUK138-50DL Technical data

BUK138-50DL

Philips Semiconductors Product specification

Logic level TOPFET

BUK138-50DL

D-PAK version of BUK117-50DL

DESCRIPTION

QUICK REFERENCE DATA

Monolithic temperature and

SYMBOL

PARAMETER

MAX.

UNIT

overload protected logic level power

MOSFET in TOPFET2 technology

VDS

Continuous drain source voltage

50

V

assembled in a 3 pin surface mount

ID

Continuous drain current

8

A

plastic package.

PD

Total power dissipation

40

W

APPLICATIONS

Tj

Continuous junction temperature

150

˚C

RDS(ON)

Drain-source on-state resistance

100

mΩ

General purpose switch for driving

IISL

Input supply current

VIS = 5 V

650

µA

lamps

motors

solenoids

heaters

in automotive systems and other

applications.

FEATURES

FUNCTIONAL BLOCK DIAGRAM

TrenchMOS output stage
Current limiting					DRAIN
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level				O / V
Control of output stage and
				CLAMP
supply of overload protection					POWER
circuits derived from input		INPUT
					MOSFET
Low operating input current				RIG
permits direct drive by
micro-controller
ESD protection on all pins			LOGIC AND
Overvoltage clamping for turn
			PROTECTION
off of inductive loads
					SOURCE
			Fig.1. Elements of the TOPFET.
PINNING - SOT428		PIN CONFIGURATION		SYMBOL
PIN	DESCRIPTION		tab		D
				TOPFET
1	input
2	drain			I
				P
3	source
tab	drain		2
		1	3		S
May 2001			1		Rev 1.300

Philips Semiconductors Product specification

Logic level TOPFET						BUK138-50DL
D-PAK version of BUK117-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL	PARAMETER	CONDITIONS			MIN.	MAX.	UNIT
V	Continuous drain source voltage1	-			-	50	V
DS
ID	Continuous drain current	VIS = 5 V; Tmb = 25 ˚C			-	self -	A
		VIS = 5 V; Tmb ≤ 110 ˚C				limited
ID	Continuous drain current				-	8	A
II	Continuous input current	-	≤ 1 ms		-5	5	mA
IIRM	Non-repetitive peak input current	tp			-10	10	mA
PD	Total power dissipation	Tmb	≤ 25 ˚C		-	40	W
Tstg	Storage temperature	-			-55	175	˚C
T	Continuous junction temperature2	normal operation			-	150	˚C
j
Tsold	Case temperature	during soldering			-	260	˚C
ESD LIMITING VALUE
SYMBOL	PARAMETER	CONDITIONS			MIN.	MAX.	UNIT
VC	Electrostatic discharge capacitor	Human body model;			-	2	kV
	voltage	C = 250 pF; R = 1.5 kΩ

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.	UNIT
	Inductive load turn-off	IDM = 8 A; VDD ≤ 20 V
EDSM	Non-repetitive clamping energy	Tmb ≤ 25	˚C	-	100	mJ
EDRM	Repetitive clamping energy	Tmb ≤ 95	˚C; f = 250 Hz	-	20	mJ

OVERLOAD PROTECTION LIMITING VALUE

With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load.

SYMBOL	PARAMETER	REQUIRED CONDITION	MIN.	MAX.	UNIT
VDS	Drain source voltage3	4 V ≤ VIS ≤ 5.5 V	0	35	V

THERMAL CHARACTERISTIC

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
	Thermal resistance
Rth j-mb	Junction to mounting base	-	-	2.5	3.1	K/W
Rth j-a	Junction to ambient	minimum footprint FR4 PCB	-	71.4	-	K/W

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.

3 All control logic and protection functions are disabled during conduction of the source drain diode.

May 2001

2

Rev 1.300