Philips BUK136-50L Technical data

BUK136-50L

Philips Semiconductors Product specification

Logic level TOPFET

BUK136-50L

SMD version of BUK125-50L

DESCRIPTION

QUICK REFERENCE DATA

Monolithic logic level protected

SYMBOL

PARAMETER

MAX.

UNIT

power MOSFET using TOPFET2

technology assembled in a 5 pin

VDS

Continuous drain source voltage

50

V

surface mounting plastic package.

ID

Continuous drain current

40

A

APPLICATIONS

Ptot

Total power dissipation

107

W

Tj

Continuous junction temperature

150

˚C

General purpose switch for

RDS(ON)

Drain-source on-state resistance

20

mΩ

SYMBOL

PARAMETER

NOM.

UNIT

automotive systems and other

applications.

VPS

Protection supply voltage

5

V

	FEATURES	FUNCTIONAL BLOCK DIAGRAM
	TrenchMOS output stage with
	low on-state resistance	PROTECTION SUPPLY	DRAIN
	Separate input pin for higher
	frequency drive
	5 V logic compatible input	FLAG
	Separate supply pin for logic		O/V
		OC LOAD
	and protection circuits with low	DETECT	CLAMP
	operating current
	Overtemperature protection	INPUT	POWER
			MOSFET
	Drain current limiting	RIG
	Short circuit load protection
	Latched overload trip state reset
	by the protection pin	LOGIC AND
	Diagnostic flag pin indicates
		PROTECTION
	protection supply connected,
	overtemperature condition,overload
	tripped state, or open circuit load
	(detected in the off-state)
	ESD protection on all pins		SOURCE
	Overvoltage clamping

Fig.1. Elements of the TOPFET.

PINNING - SOT426

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1input

2flag

3(connected to mb)

4protection supply

5source

mb drain

mb		D
	TOPFET
	P	P
	F
3	I

1 2	4 5	S
	Fig. 2.	Fig. 3.

July 2002

1

Rev 1.000

Philips Semiconductors Product specification

Logic level TOPFET					BUK136-50L
SMD version of BUK125-50L
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.	UNIT
	Continuous voltage
V	Drain source voltage1	V = 0 V		-	50	V
DS		IS
	Continuous currents
ID	Drain current	VPS = 5 V; Tmb = 25˚C		-	self -	A
					limited
II		VPS = 0 V; Tmb = 80˚C		-	40	A
	Input current			-5	5	mA
IF	Flag current			-5	5	mA
IP	Protection supply current			-5	5	mA
	Thermal
Ptot	Total power dissipation	Tmb = 25˚C		-	107	W
Tstg	Storage temperature	continuous		-55	175	˚C
T	Junction temperature2			-	150	˚C
j
Tsold	Mounting base temperature	during soldering		-	260	˚C
ESD LIMITING VALUE
SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.	UNIT
VC	Electrostatic discharge capacitor	Human body model;		-	2	kV
	voltage	C = 250 pF; R = 1.5 kΩ

OVERLOAD PROTECTION LIMITING VALUE

With an adequate protection supply connected, TOPFET can protect itself from two types of overload - overtemperature and short circuit load.

For overload conditions an n-MOS transistor turns on between the input and source to quickly discharge the power MOSFET gate capacitance.

The drain current is limited to reduce dissipation in case of short circuit load. Refer to OVERLOAD CHARACTERISTICS.

SYMBOL	PARAMETER	REQUIRED CONDITION	MIN.	MAX.	UNIT
	Overload protection3	protection supply
VDS	Drain source voltage	VPS ≥ 4 V	0	35	V

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
	Inductive load turn off	IDM = 25 A; VDD ≤ 20 V
EDSM	Non-repetitive clamping energy	Tmb = 25˚C	-	550	mJ
EDRM	Repetitive clamping energy	Tmb ≤ 95˚C; f = 250 Hz	-	60	mJ

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.

3 All control logic and protection functions are disabled during conduction of the source drain diode. If the protection circuit was previously latched, it would be reset by this condition.

July 2002

2

Rev 1.000

Philips Semiconductors Product specification

Logic level TOPFET				BUK136-50L
SMD version of BUK125-50L
THERMAL CHARACTERISTIC
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
	Thermal resistance
Rth j-mb	Junction to mounting base	-	-	0.94	1.17	K/W

OUTPUT CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS			MIN.	TYP.	MAX.	UNIT
	Off-state	VIS = 0 V
V(CL)DSS	Drain-source clamping voltage	ID = 10 mA			50	-	70	V
		IDM = 5 A; tp ≤ 300 µ s; δ ≤		0.01	50	60	70	V
IDSS	Drain source leakage current1	VPS = 0 V; VDS = 40 V			-	-	100	µ A
			Tmb = 25˚C		-	0.1	10	µ A
	On-state	tp ≤ 300 µ s; δ ≤	0.01; VPS ≥	4 V
RDS(ON)	Drain-source resistance	IDM = 15 A; VIS ≥	4.4 V		-	-	40	mΩ
			Tmb = 25˚C		-	15	20	mΩ

INPUT CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
	Normal operation
V	Input threshold voltage2	I = 1 mA	0.6	-	2.6	V
IS(TO)		D
		Tmb = 25˚C	1.1	1.6	2.1	V
IIS	Input current	VIS = 5 V	-	16	100	µ A
V(CL)IS	Input clamping voltage	II = 1 mA	5.5	6.4	8.5	V
RIG	Internal series resistance3	to gate of power MOSFET	-	1.7	-	kΩ
	Overload protection latched	VPS ≥ 4 V
IISL	Input current	VIS = 5 V	1	2.7	4	mA

1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.

2 The measurement method is simplified if VPS = 0 V, in order to distinguish ID from IDSP. Refer to OPEN CIRCUIT LOAD DETECTION

CHARACTERISTICS.

3 This is not a directly measurable parameter.

July 2002

3

Rev 1.000