Philips BUK136-50L Technical data

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Philips Semiconductors Product specification

Logic level TOPFET BUK136-50L
SMD version of BUK125-50L

DESCRIPTION QUICK REFERENCE DATA

Monolithic logic level protected SYMBOL PARAMETER MAX. UNIT
power MOSFET using TOPFET2
technology assembled in a 5 pin V
surface mounting plastic package. I

APPLICATIONS T

General purpose switch for

D

P
R

DS

tot
j

DS(ON)

automotive systems and other SYMBOL PARAMETER NOM. UNIT
applications.

V

PS

Continuous drain source voltage 50 V
Continuous drain current 40 A
Total power dissipation 107 W

Continuous junction temperature 150 ˚C
Drain-source on-state resistance 20 mΩ

Protection supply voltage 5 V

FEATURES FUNCTIONAL BLOCK DIAGRAM

TrenchMOS output stage with

low on-state resistance

PROTECTION SUPPLY

Separate input pin for higher

frequency drive

5 V logic compatible input

Separate supply pin for logic
and protection circuits with low
operating current

Overtemperature protection

Drain current limiting

FLAG

INPUT

OC LOAD

DETECT

O/V

CLAMP

RIG

Short circuit load protection

Latched overload trip state reset
by the protection pin

Diagnostic flag pin indicates
protection supply connected,

LOGIC AND

PROTECTION

overtemperature condition,overload
tripped state, or open circuit load
(detected in the off-state)

ESD protection on all pins

Overvoltage clamping

Fig.1. Elements of the TOPFET.

PINNING - SOT426 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 input
2 flag
3 (connected to mb)
4 protection supply
5 source

mb drain

3

12 45

mb

Fig. 2. Fig. 3.

TOPFET

P
F

I

DRAIN

POWER
MOSFET

SOURCE

D

P

S

July 2002 1 Rev 1.000

Philips Semiconductors Product specification

Logic level TOPFET BUK136-50L
SMD version of BUK125-50L

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Continuous voltage

V

DS

Drain source voltage

Continuous currents

I

D

I

I

I

F

I

P

Drain current VPS = 5 V; T

Input current -5 5 mA
Flag current -5 5 mA
Protection supply current -5 5 mA

Thermal

P

tot

T

stg

T

j

T

sold

Total power dissipation Tmb = 25˚C - 107 W
Storage temperature -55 175 ˚C

Junction temperature
Mounting base temperature during soldering - 260 ˚C

1

2

VIS = 0 V - 50 V

25˚C - self - A

VPS = 0 V; T

mb =

80˚C - 40 A

mb =

limited

continuous - 150 ˚C

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ

OVERLOAD PROTECTION LIMITING VALUE

With an adequate protection supply For overload conditions an n-MOS The drain current is limited to
connected, TOPFET can protect transistor turns on between the reduce dissipation in case of short
itself from two types of overload - input and source to quickly circuit load. Refer to OVERLOAD
overtemperature and short circuit discharge the power MOSFET CHARACTERISTICS.
load. gate capacitance.

SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT

Overload protection

V

DS

Drain source voltage VPS ≥ 4 V 0 35 V

3

protection supply

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Inductive load turn off IDM = 25 A; VDD ≤ 20 V

E

DSM

E

DRM

Non-repetitive clamping energy Tmb = 25˚C - 550 mJ
Repetitive clamping energy Tmb ≤ 95˚C; f = 250 Hz - 60 mJ

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold T
3 All control logic and protection functions are disabled during conduction of the source drain diode. If the protection circuit was previously

latched, it would be reset by this condition.

the over temperature trip operates to protect the switch.

j(TO)

July 2002 2 Rev 1.000

Philips Semiconductors Product specification

Logic level TOPFET BUK136-50L
SMD version of BUK125-50L

THERMAL CHARACTERISTIC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R

th j-mb

OUTPUT CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(CL)DSS

I

DSS

Junction to mounting base - - 0.94 1.17 K/W

Off-state VIS = 0 V
Drain-source clamping voltage ID = 10 mA 50 - 70 V

= 5 A; tp ≤ 300 µs; δ ≤ 0.01 50 60 70 V

I

DM

Drain source leakage current1VPS = 0 V; VDS = 40 V - - 100 µA

Tmb = 25˚C - 0.1 10 µA

On-state tp ≤ 300 µs; δ ≤ 0.01; VPS ≥ 4 V

R

DS(ON)

Drain-source resistance IDM = 15 A; VIS ≥ 4.4 V - - 40 mΩ

Tmb = 25˚C - 15 20 mΩ

INPUT CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Normal operation

V

I

IS

V
R

I

ISL

IS(TO)

(CL)IS

IG

Input threshold voltage

Input current VIS = 5 V - 16 100 µA
Input clamping voltage II = 1 mA 5.5 6.4 8.5 V
Internal series resistance
Overload protection latched VPS ≥ 4 V
Input current VIS = 5 V 1 2.7 4 mA

2

ID = 1 mA 0.6 - 2.6 V

Tmb = 25˚C 1.1 1.6 2.1 V

3

to gate of power MOSFET - 1.7 - kΩ

1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state

2 The measurement method is simplified if VPS = 0 V, in order to distinguish ID from I

3 This is not a directly measurable parameter.

quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.

. Refer to OPEN CIRCUIT LOAD DETECTION

CHARACTERISTICS.

DSP

July 2002 3 Rev 1.000