Philips BUK130-50DL Technical data

BUK130-50DL

Philips Semiconductors Product specification

Logic level TOPFET

BUK130-50DL

SMD version of BUK119-50DL

DESCRIPTION

QUICK REFERENCE DATA

Monolithic temperature and

SYMBOL

PARAMETER

MAX.

UNIT

overload protected logic level power

MOSFET in TOPFET2 technology

VDS

Continuous drain source voltage

50

V

assembled in a 3 pin surface mount

ID

Continuous drain current

20

A

plastic package.

PD

Total power dissipation

90

W

APPLICATIONS

Tj

Continuous junction temperature

150

˚C

RDS(ON)

Drain-source on-state resistance

28

mΩ

General purpose switch for driving

IISL

Input supply current

VIS = 5 V

650

µA

lamps

motors

solenoids

heaters

in automotive systems and other

applications.

FEATURES

TrenchMOS output stage Current limiting Overload protection

Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input

Low operating input current permits direct drive by micro-controller

ESD protection on all pins Overvoltage clamping for turn off of inductive loads

O / V

RIG

CLAMP

POWER

MOSFET

FUNCTIONAL BLOCK DIAGRAM

DRAIN

INPUT

LOGIC AND

PROTECTION

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1input

2drain

3source mb drain

		mb	D
			TOPFET
			I
			P
	2
1	3		S

May 2001

1

Rev 1.900

Philips Semiconductors Product specification

Logic level TOPFET					BUK130-50DL
SMD version of BUK119-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.	UNIT
V	Continuous drain source voltage1			-	50	V
DS
ID	Continuous drain current	VIS = 5 V; Tmb = 25˚C		-	self -	A
		VIS = 5 V; Tmb ≤ 121˚C			limited
ID	Continuous drain current			-	20	A
II	Continuous input current	δ ≤ 0.1, tp = 300 µs		-5	5	mA
IIRM	Repetitive peak input current			-50	50	mA
PD	Total power dissipation	Tmb ≤ 25˚C		-	90	W
Tstg	Storage temperature			-55	175	˚C
T	Continuous junction temperature2	normal operation		-	150	˚C
j
Tsold	Case temperature	during soldering		-	260	˚C
ESD LIMITING VALUE
SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.	UNIT
VC	Electrostatic discharge capacitor	Human body model;		-	2	kV
	voltage	C = 250 pF; R = 1.5 kΩ

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
	Inductive load turn-off	IDM = 20 A; VDD ≤ 20 V
EDSM	Non-repetitive clamping energy	Tmb ≤ 25˚C	-	350	mJ
EDRM	Repetitive clamping energy	Tmb ≤ 95˚C; f = 250 Hz	-	45	mJ

OVERLOAD PROTECTION LIMITING VALUE

With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load.

SYMBOL	PARAMETER	REQUIRED CONDITION	MIN.	MAX.	UNIT
VDS	Drain source voltage3	4 V ≤ VIS ≤ 5.5 V	0	35	V

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
	Thermal resistance
Rth j-mb	Junction to mounting base	-	-	1.25	1.39	K/W
Rth j-a	Junction to ambient	minimum footprint FR4 PCB	-	50	-	K/W

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.

3 All control logic and protection functions are disabled during conduction of the source drain diode.

May 2001

2

Rev 1.900