Philips BUK127-50GT Technical data
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Philips Semiconductors Product specification
PowerMOS transistor BUK127-50GT
Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in TOPFET2 technology V
assembled in a 3 pin surface mount
plastic package. I
DS
D
Continuous drain source voltage 50 V
Continuous drain current 2.1 A
APPLICATIONS P
General purpose switch for driving T
lamps
motors R
D
j
DS(ON)
Total power dissipation 1.8 W
Continuous junction temperature 150 ˚C
Drain-source on-state resistance 200 mΩ
solenoids
heaters
in automotive systems and other
applications.
FEATURES FUNCTIONAL BLOCK DIAGRAM
TrenchMOS output stage
Current trip protection
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage
and supply of overload
protection circuits
derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
INPUT
RIG
LOGIC AND
PROTECTION
O / V
CLAMP
DRAIN
POWER
MOSFET
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
3 source
4 drain (tab)
1
December 2001 1 Rev 2.000
4
23
TOPFET
I
D
P
S
Philips Semiconductors Product specification
PowerMOS transistor BUK127-50GT
Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
I
I
I
P
T
T
DS
D
D
I
IRM
D
stg
j
Continuous drain source voltage
Drain current
2
Continuous drain current Ta = 25˚C - 2.1 A
Continuous input current clamping - 3 mA
Non-repetitive peak input current tp ≤ 1 ms - 10 mA
Total power dissipation Ta = 25 ˚C - 1.8 W
Storage temperature - -55 150 ˚C
Continuous junction temperature normal operation
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1
- - 50 V
- - current trip A
3
- 150 ˚C
V
C
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
DSM
Non-repetitive clamping energy Ta ≤ 25 ˚C; IDM ≤ I
; - 100 mJ
D(TO)
inductive load
E
DRM
Repetitive clamping energy Tsp ≤ 125 ˚C; IDM = 1 A; - 5 mJ
f = 250 Hz
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from short circuit loads.
Overload protection operates by means of drain current trip or by activating the overtemperature protection.
SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT
V
DDP
Protected drain source supply voltage VIS ≥ 4 V - 35 V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
R
R
R
th j-sp
th j-b
th j-a
Junction to solder point - 12 18 K/W
Junction to board
4
Mounted on any PCB - 40 - K/W
Junction to ambient Mounted on PCB of fig. 4 - - 70 K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3 Not in an overload condition with drain current limiting.
4 Temperature measured 1.3 mm from tab.
December 2001 2 Rev 2.000
Philips Semiconductors Product specification
PowerMOS transistor BUK127-50GT
Logic level TOPFET
OUTPUT CHARACTERISTICS
Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
= 0 V
IS
V
(CL)DSS
Off-state V
Drain-source clamping voltage ID = 10 mA 50 - - V
ID = 200 mA; tp ≤ 300 µs; δ ≤ 0.01 50 60 70 V
I
DSS
Drain source leakage current VDS = 40 V - - 100 µA
Tmb = 25 ˚C - 0.1 10 µA
On-state VIS ≥ 4 V; tp ≤ 300 µs; δ ≤ 0.01
R
DS(ON)
Drain-source resistance ID = 100 mA - - 380 mΩ
Tmb = 25 ˚C - 150 200 mΩ
INPUT CHARACTERISTICS
The supply for the logic and overload protection is taken from the input.
Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
I
IS
I
ISL
V
t
lr
V
R
IS(TO)
ISR
(CL)IS
IG
Input threshold voltage VDS = 5 V; ID = 1 mA 0.6 - 2.4 V
Tmb = 25˚C 1.1 1.6 2.1 V
Input supply current normal operation; VIS = 5 V 100 220 400 µA
VIS = 4 V 80 195 330 µA
Input supply current protection latched; VIS = 5 V 1.4 2 2.5 mA
VIS = 3 V 0.7 1.1 1.5 mA
Protection reset voltage
Latch reset time V
1
reset time tr ≥ 100 µs 1.5 2 2.5 V
= 5 V, V
IS1
< 1 V 10 40 100 µs
IS2
Input clamping voltage II = 1.5 mA 5.5 - 8.5 V
Input series resistance
2
Tmb = 25˚C - 2.5 - kΩ
to gate of power MOSFET
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until
reset by the input.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Overload protection VIS = 4 V to 5.5 V
I
D(TO)
T
j(TO)
1 The input voltage below which the overload protection circuits will be reset.
2 Not directly measureable from device terminals.
December 2001 3 Rev 2.000
Drain current trip threshold Tj = 25˚C 4 - 8 A
-40˚C ≤ Tj ≤ 150˚C 3 - 9 A
Overtemperature protection
Threshold junction temperature VIS = 4 V to 5.5 V 150 170 - ˚C
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