Philips BUK127-50DL Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK127-50DL Logic level TOPFET

DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V assembled in a 3 pin surface mount plastic package. I

Continuous drain source voltage 50 V Continuous drain current 0.7 A

APPLICATIONS P

General purpose switch for driving T

lamps motors R

DS(ON)

Total power dissipation 1.8 W Continuous junction temperature 150 ˚C

Drain-source on-state resistance 200 mΩ solenoids heaters

in automotive systems and other applications.

FEATURES FUNCTIONAL BLOCK DIAGRAM

TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads

INPUT

RIG

LOGIC AND

PROTECTION

O / V

CLAMP

DRAIN

POWER MOSFET

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT223 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 input 2 drain 3 source 4 drain (tab)

October 1999 1 Rev 1.000

TOPFET

Philips Semiconductors Product specification

PowerMOS transistor BUK127-50DL Logic level TOPFET

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V I I I P T T

DS D I IRM

stg

Continuous drain source voltage Continuous drain current

Continuous input current clamping - 3 mA Non-repetitive peak input current tp ≤ 1 ms - 10 mA Total power dissipation Ta = 25˚C - 1.8 W Storage temperature - -55 150 ˚C Continuous junction temperature normal operation

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

- - 50 V

- - self limiting A

- 150 ˚C

Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

DSM

Non-repetitive clamping energy Ta ≤ 25˚C; IDM < I

; - 100 mJ

D(lim)

inductive load

DRM

Repetitive clamping energy Tsp ≤ 125˚C; IDM = 50 mA; - 5 mJ

f = 250 Hz

OVERLOAD PROTECTION LIMITING VALUES

With the protection supply provided via the input pin, TOPFET can protect itself from short circuit loads. Overload protection operates by means of drain current limiting and activating the overtemperature protection.

SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT

DDP

Protected drain source supply voltage VIS ≥ 4 V - 35 V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R R R

th j-sp th j-b th j-a

Junction to solder point - 12 18 K/W Junction to board

Mounted on any PCB - 40 - K/W

Junction to ambient Mounted on PCB of fig. 22 - - 70 K/W

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 Refer to OVERLOAD PROTECTION CHARACTERISTICS. 3 Not in an overload condition with drain current limiting. 4 Temperature measured 1.3 mm from tab.

October 1999 2 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK127-50DL Logic level TOPFET

OUTPUT CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Off-state VIS = 0 V

(CL)DSS

Drain-source clamping voltage ID = 10 mA 50 - - V

ID = 200 mA; tp ≤ 300 µs; δ ≤ 0.01 50 60 70 V

DSS

Drain source leakage current VDS = 40 V - - 100 µA

Tmb = 25 ˚C - 0.1 10 µA

On-state VIS ≥ 4 V; tp ≤ 300 µs; δ ≤ 0.01

DS(ON)

Drain-source resistance ID = 100 mA - - 380 mΩ

Tmb = 25 ˚C - 150 200 mΩ

INPUT CHARACTERISTICS

The supply for the logic and overload protection is taken from the input. Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ISL

V t

V R

IS(TO)

ISR

(CL)IS

Input threshold voltage VDS = 5 V; ID = 1 mA 0.6 - 2.4 V

Tmb = 25˚C 1.1 1.6 2.1 V

Input supply current normal operation; VIS = 5 V 100 220 400 µA

VIS = 4 V 80 195 330 µA

Input supply current protection latched; VIS = 5 V 200 400 650 µA

VIS = 3 V 130 250 430 µA Protection reset voltage Latch reset time V

reset time tr ≥ 100 µs 1.5 2 2.5 V

= 5 V, V

IS1

< 1 V 10 40 100 µs

IS2

Input clamping voltage II = 1.5 mA 5.5 - 8.5 V Input series resistance

Tmb = 25˚C - 33 - kΩ to gate of power MOSFET

1 The input voltage below which the overload protection circuits will be reset. 2 Not directly measureable from device terminals.

October 1999 3 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK127-50DL Logic level TOPFET

OVERLOAD PROTECTION CHARACTERISTICS

TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the input.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Overload protection -40˚C ≤ Tj ≤ 150˚C

Drain current limiting VIS = 5 V 0.8 1.3 1.7 A

VIS = 4.5 V 0.7 - - A VIS = 4 V to 5.5 V 0.6 - 1.8 A

Short circuit load protection VIS = 5 V

P T

D(TO)

DSC

Overload power threshold for protection to operate - 17 - W Characteristic time which determines trip time

- 1.6 - ms

Overtemperature protection from ID ≥ 280 mA or VDS ≥ 100 mV

j(TO)

Threshold junction temperature VIS = 4 V to 5.5 V 150 165 - ˚C

SWITCHING CHARACTERISTICS

Ta = 25˚C; resistive load RL = 50 Ω; adjust VDD to obtain ID = 250 mA; refer to test circuit and waveforms

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

t t t t

d on

d off

Turn-on delay time VIS: 0 V ⇒ 5 V - 5 12 µs Rise time - 11 30 µs Turn-off delay time VIS: 5 V ⇒ 0 V - 25 65 µs Fall time - 14 35 µs

REVERSE DIODE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Continuous forward current Tmb ≤ 25 ˚C; VIS = 0 V - 2 A

REVERSE DIODE CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

SDO

1 Trip time t 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.

Forward voltage IS = 2 A; VIS = 0 V; tp = 300 µs - 0.83 1.1 V Reverse recovery time not applicable

varies with overload dissipation PD according to the formula t

d sc

≈ T

/ [ PD / P

DSC

D(TO)

----

- 1 ].

October 1999 4 Rev 1.000

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