Philips BUK118-50DL Technical data

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Philips Semiconductors Product specification

Logic level TOPFET BUK118-50DL

DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in TOPFET2 technology V
assembled in a 3 pin plastic I
package. P

APPLICATIONS R

D

T

DS

D
j

DS(ON)

Continuous drain source voltage 50 V
Continuous drain current 16 A
Total power dissipation 65 W
Continuous junction temperature 150 ˚C

Drain-source on-state resistance 50 mΩ

General purpose switch for driving I

lamps

ISL

Input supply current VIS = 5 V 650 µA

motors
solenoids

heaters
in automotive systems and other
applications.

FEATURES FUNCTIONAL BLOCK DIAGRAM

TrenchMOS output stage

Current limiting

Overload protection

Overtemperature protection

Protection latched reset by input

5 V logic compatible input level

Control of output stage and

supply of overload protection

circuits derived from input

Low operating input current

permits direct drive by

micro-controller

ESD protection on all pins

Overvoltage clamping for turn

off of inductive loads

INPUT

RIG

LOGIC AND

PROTECTION

O / V

CLAMP

DRAIN

POWER
MOSFET

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT78B PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 input
2 drain
3 source

tab drain

May 2001 1 Rev 1.900

mb mb

123

Front view

MBL292

TOPFET

I

D

P

S

Philips Semiconductors Product specification

Logic level TOPFET BUK118-50DL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
I

I
I
I
P
T
T

T

DS

D

D
I
IRM

D
stg
j

sold

Continuous drain source voltage
Continuous drain current VIS = 5 V; T

Continuous drain current VIS = 5 V; T
Continuous input current - -5 5 mA
Non-repetitive peak input current tp ≤ 1 ms -10 10 mA
Total power dissipation Tmb ≤ 25 ˚C - 65 W
Storage temperature - -55 175 ˚C
Continuous junction temperature

Lead temperature during soldering - 260 ˚C

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

1

- - 50 V
25 ˚C - self - A

mb =

limited

125 ˚C - 16 A

mb ≤

2

normal operation - 150 ˚C

V

C

Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Inductive load turn-off IDM = 16 A; VDD ≤ 20 V

E

DSM

E

DRM

Non-repetitive clamping energy Tmb ≤ 25 ˚C - 200 mJ
Repetitive clamping energy Tmb ≤ 95 ˚C; f = 250 Hz - 32 mJ

OVERLOAD PROTECTION LIMITING VALUE

With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload

- overtemperature and short circuit load.

SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT

V

DS

Drain source voltage

3

4 V ≤ VIS ≤ 5.5 V 0 35 V

THERMAL CHARACTERISTIC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R

th j-mb

Junction to mounting base - - 1.75 1.92 K/W

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold T
3 All control logic and protection functions are disabled during conduction of the source drain diode.

the over temperature trip operates to protect the switch.

j(TO)

May 2001 2 Rev 1.900