Philips BUK113-50DL Datasheet
Philips Semiconductors Objective specification
PowerMOS transistor BUK113-50DL
Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic overload protected logic SYMBOL PARAMETER MIN. MAX. UNIT
level power MOSFET in a surface
mount plastic envelope, intended as V
a general purpose switch for
automotive systems and other I
applications.
DS
D
P
D
APPLICATIONS
T
General controller for driving
lamps R
j
DS(ON)
small motors
solenoids
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Overload protected up to
125˚C ambient
Overload protection by current
limiting and overtemperature
sensing
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
INPUT
Continuous drain source voltage - 50 V
Drain current limiting 4 8 A
Total power dissipation - 4 W
Continuous junction temperature - 150 ˚C
Drain-source on-state resistance - 200 mΩ
DRAIN
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
POWER
MOSFET
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
3 source
4 drain (tab)
1
January 1996 1 Rev 1.000
4
23
TOPFET
I
D
P
S
Philips Semiconductors Objective specification
PowerMOS transistor BUK113-50DL
Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
I
I
P
T
T
DS
D
I
IRM
D
stg
j
Continuous drain source voltage
Continuous drain current
2
Continuous input current clamping - 3 mA
Non-repetitive peak input current tp ≤ 1 ms - 10 mA
Total power dissipation Tsp = 90 ˚C - 4 W
Storage temperature - -55 150 ˚C
Continuous junction temperature normal operation - 150 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1
- - 50 V
- - self limiting A
V
C
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
DSM
Non-repetitive clamping energy Tb ≤ 25 ˚C; IDM < I
; - 100 mJ
D(lim)
inductive load
E
DRM
Repetitive clamping energy Tb ≤ 75 ˚C; IDM = 50 mA; - 4 mJ
f = 250 Hz
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from short circuit loads.
Overload protection operates by means of drain current limiting and activating the overtemperature protection.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
ISP
V
DDP
Protection supply voltage
Protected drain source supply voltage VIS = 5 V - 35 V
3
for valid protection 4 - V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
R
th j-sp
Junction to solder point measured to pin 4 solder point - 12 15 K/W
Application information
R
th j-a
Junction to ambient on PCB of fig. 3 - 70 - K/W
on minimum footprint PCB - 100 - K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3 The input voltage for which the overload protection circuits are functional.
January 1996 2 Rev 1.000
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