Philips BUK112-50GL Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK112-50GL
Logic level TOPFET

DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in a 5 pin plastic V
envelope, intended as a low side I
switch for automotive applications. T

DS

D

j

R

DS(ON)

SYMBOL PARAMETER NOM. UNIT

Continuous drain source voltage 50 V
Continuous drain current 12 A
Continuous junction temperature 150 ˚C
Drain-source on-state resistance 93 mΩ

V

PS

Protection supply voltage 5 V

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS output
stage
Low on-state resistance
Low operating supply current
Overtemperature protection
Overload protection against
short circuit load with
drain current limiting
Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
Off-state detection
of open circuit load
indicated by flag pin
5 V logic compatible input level
Integral input resistors.
ESD protection on all pins
Over voltage clamping

PROTECTION SUPPLY

FLAG

INPUT

RIS

Fig.1. Elements of the TOPFET.

OC LOAD

DETECT

RIG

LOGIC AND

PROTECTION

DRAIN

O/V

CLAMP

POWER
MOSFET

SOURCE

PINNING - SOT263 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

12345

tab

TOPFET

P
F

I

leadform

263-01

1 input
2 flag
3 drain
4 protection supply
5 source

Fig. 2. Fig. 3.

tab drain

September 1996 1 Rev 1.000

D

P

S

Philips Semiconductors Product specification

PowerMOS transistor BUK112-50GL
Logic level TOPFET

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Continuous voltage

V

DS

Drain source voltage

Continuous currents

I

D

I

I

I

F

I

P

Drain current VPS = 5 V; T

Input current - -5 5 mA
Flag current - -5 5 mA
Protection supply current - -5 5 mA

Thermal

P

tot

T

stg

T

j

T

sold

Total power dissipation Tmb = 25 ˚C - 52 W
Storage temperature - -55 175 ˚C

Junction temperature
Lead temperature during soldering - 260 ˚C

1

2

VIS = 0 V - 50 V

25 ˚C - self - A

VPS = 0 V; T

mb =

94 ˚C - 12 A

mb =

limited

continuous - 150 ˚C

ESD LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Electrostatic discharge capacitor Human body model;
voltages C = 100 pF; R = 1.5 kΩ

V

C1

V

C2

Drain to source - 4.5 kV
Input, flag or protection to source - 2 kV

OVERLOAD PROTECTION LIMITING VALUE

With the protection supply For overload conditions an n-MOS The drain current is limited to
connected, TOPFET can protect transistor turns on between the reduce dissipation in case of short
itself from two types of overload - gate and source to quickly circuit load. Refer to OVERLOAD
short circuit load and discharge the power MOSFET CHARACTERISTICS.
overtemperature. gate capacitance.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

PSP

Protection supply voltage

3

for valid protection 4.5 - V

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

DSM

E

DRM

Non-repetitive clamping energy IDM = 6 A; Tmb = 25˚C - 200 mJ
Repetitive clamping energy IDM = 3.1 A; VDD ≤ 20 V; - 20 mJ

Tmb ≤ 120˚C; f = 250 Hz

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold T
3 The minimum supply voltage required for correct operation of the overload protection circuits.

the over temperature trip operates to protect the switch.

j(TO)

September 1996 2 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK112-50GL
Logic level TOPFET

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R

th j-mb

R

th j-a

OUTPUT CHARACTERISTICS

Tmb = 25 ˚C; VPS = 0 V unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(CL)DSS

I

DSS

R

DS(ON)

Junction to mounting base - - - 2.38 K/W
Junction to ambient in free air - 60 - K/W

Off-state

Drain-source clamping voltage ID = 10 mA; -40˚C ≤ Tmb ≤ 150˚C 50 - 70 V

IDM = 0.75 A; tp ≤ 300 µs; δ ≤ 0.01 50 60 70 V

Drain-source leakage current1VIS = 0 V; VDS = 13 V - 0.5 10 µA

VDS = 50 V - 1 20 µA

Tmb = 125 ˚C; VDS = 40 V - 10 100 µA
On-state tp ≤ 300 µs; δ ≤ 0.01
Drain-source on-resistance IDM = 6 A; VIS = 4.4 V; VPS = 4.5 V - 70 93 mΩ

Tmb = 150 ˚C - 135 165 mΩ

INPUT CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Normal operation

V

I

IS

V
R

IS(TO)

(CL)IS

IG

Input threshold voltage VDS = 13 V; VPS = 0 V; ID = 1 mA 1 1.5 2 V

-40˚C ≤ Tmb ≤ 150˚C 0.5 - 2.5 V
Input current VIS = 5 V -40˚C ≤ Tmb ≤ 150˚C 200 350 500 µA
Input clamping voltage II = 1.5 mA 6 7.1 - V
Internal series resistance to gate of power MOSFET - 1.5 - kΩ

Overload protection latched

I

ISL

Input current VPS = 5 V; VIS = 5 V 1.5 3.2 4 mA

REVERSE CHARACTERISTICS

Tmb = 25 ˚C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

-V

-V

-V

-V

DS

IS

PS

FS

Reverse drain voltage
Reverse input voltage -II = 5 mA - 0.7 - V
Reverse protection pin voltage -IP = 5 mA - 0.7 - V
Reverse flag voltage -IF = 5 mA - 0.7 - V

2

-ID = 6 A - 0.8 - V

1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state

2 Protection functions are disabled during reverse conduction.

quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.

September 1996 3 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK112-50GL
Logic level TOPFET

PROTECTION SUPPLY CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Normal operation or
protection latched

IPS, I

V

(CL)PS

PSL

Supply current VPS = 4.5 V - 330 400 µA

-40˚C ≤ Tmb ≤ 150˚C - - 450 µA
Clamping voltage IP = 1.5 mA 6 7.1 - V

Overload protection latched

V

PSR

Reset voltage - 2.1 - V

-40˚C ≤ Tmb ≤ 150˚C 1.5 - 3 V

t

pr

Reset time VPS = 0 V - 25 - µs

-40˚C ≤ Tmb ≤ 150˚C - - 150 µs

OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS

An open circuit load condition can be detected while the TOPFET is in the off-state.

-40˚C ≤ Tmb ≤ 150˚C; VPS = 5 V; VDS = 13 V unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I
I
V

DSP

DSF

ISF

Off-state drain current
Off-state drain threshold current VIS = 0 V; IF = 100 µA 0.4 1.1 - mA
Input threshold voltage

1

2

VIS = 0 V 0.5 1.4 2 mA

IF = 100 µA; ID = 100 µA; - 1.2 - V
Tmb = 25 ˚C

TRUTH TABLE

For normal, open-circuit load and overload conditions or inadequate protection supply voltage.

CONDITION PROTECTION INPUT FLAG OUTPUT

Normal on-state 1 1 0 1
Normal off-state 1 0 0 0
Open circuit load 1 1 0 1
Open circuit load 1 0 1 0
Short circuit load 1 1 1 0
Over temperature 1 X 1 0
Low protection supply voltage 0 1 1 1
Low protection supply voltage 0 0 1 0

For protection ‘0’ equals low, ‘1’ equals high.
For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care.
For flag ‘0’ equals low, ‘1’ equals open or high.
For output switch ‘0’ equals off, ‘1’ equals on.

1 The drain source current which flows when the protection supply is high and the input is low.
2 For open circuit load indication, VIS must be less than V

.

ISF

September 1996 4 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK112-50GL
Logic level TOPFET

OVERLOAD CHARACTERISTICS

Tmb = 25 ˚C; VPS = 5 V unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Short circuit load protection VIS = 5 V

I

D

P

D(TO)

E

DSC

I

DM

T

j(TO)

FLAG CHARACTERISTICS

The flag is an open drain transistor which requires an external pull-up circuit.
Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

FSF

I

FSF

I

FSO

V

(CL)FS

V

PSF

R

F

Drain current limiting VDS = 13 V -40˚C ≤ Tmb ≤ 150˚C 12 24 36 A
Overload power threshold
Characteristic energy which determines trip time
Peak drain current

3

1

for protection to operate - 100 - W

2

- 200 - mJ

VDD = 13 V; RL ≤ 10 mΩ -45- A

Overtemperature protection

Threshold temperature ID ≥ 1 A 150 185 215 ˚C

Flag ‘low’ normal operation; VPS = 5 V
Flag voltage IF = 100 µA - 0.7 - V

-40˚C ≤ Tmb ≤ 150˚C - - 0.9 V
Flag saturation current VFS = 5 V - 10 - mA
Flag ‘high’ overload or fault
Flag leakage current VFS = 5 V - 0.1 1 µA

Tmb = 150˚C - 1 10 µA
Flag clamping voltage IF = 100 µA 6 6.9 - V
Protection supply threshold IF = 100 µA; VDS = 5 V 2.5 3 4 V

voltage

4

-40˚C ≤ Tmb ≤ 150˚C 2 - 4 V

Application information

Suitable external pull-up VFF = 5 V - 50 - kΩ
resistance

1 Refer to figure 15.
2 Trip time t
3 For short circuit load connected after turn-on.
4 When VPS is less than V

d sc

≈ E

/ [ PD - P

DSC

]. Refer also to figure 15.

D(TO)

the flag pin indicates low protection supply voltage. Refer to TRUTH TABLE.

PSF

September 1996 5 Rev 1.000