How it Works
Philips
Loading...
BUK110-50GL
Datasheet
11 pgs112.63 Kb0

Philips BUK110-50GL Datasheet

Philips Semiconductors Product specification
PowerMOS transistor BUK110-50GL Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface V mount envelope, intended as a I general purpose switch for P automotive systems and other T applications. R
DS
D
D j
DS(ON)
APPLICATIONS
General controller for driving
lamps motors solenoids heaters
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 5 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads
INPUT
VIS = 5 V
DRAIN
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
POWER MOSFET
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input 2 drain 3 source
mb drain
2
13
mb
TOPFET
I
June 1996 1 Rev 1.000
D
P
S
Philips Semiconductors Product specification
PowerMOS transistor BUK110-50GL Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V
I
D
I
D
I
DRM
P T T
T
DSS
IS
D stg j
sold
Continuous off-state drain source VIS = 0 V - 50 V voltage
1
Continuous input voltage - 0 6 V Continuous drain current T Continuous drain current T
25 ˚C; VIS = 5 V - 45 A
mb ≤
100 ˚C; VIS = 5 V - 28 A
mb ≤
Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 5 V - 180 A Total power dissipation Tmb ≤ 25 ˚C - 125 W Storage temperature - -55 150 ˚C Continuous junction temperature
2
normal operation - 150 ˚C
Lead temperature during soldering - 250 ˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V P
ISP
DDP(T)
DDP(P) DSM
Protection supply voltage
Over temperature protection
Protected drain source supply voltage VIS = 5 V - 50 V
Short circuit load protection
Protected drain source supply voltage4VIS = 5 V - 24 V Instantaneous overload dissipation Tmb = 25 ˚C - 2.1 kW
3
for valid protection 4 - V
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
DROM
E
DSM
Repetitive peak clamping current VIS = 0 V - 45 A Non-repetitive clamping energy Tmb ≤ 25 ˚C; IDM = 25 A; - 1 J
VDD ≤ 25 V; inductive load
E
DRM
Repetitive clamping energy Tmb ≤ 85 ˚C; IDM = 16 A; - 80 mJ
VDD ≤ 20 V; f = 250 Hz
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold T 3 The input voltage for which the overload protection circuits are functional. 4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ
the over temperature trip operates to protect the switch.
j(TO)
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
DDP(P)
maximum.
June 1996 2 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor BUK110-50GL Logic level TOPFET
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
R R
th j-mb
th j-a
Junction to mounting base - - 0.8 1.0 K/W Junction to ambient minimum footprint FR4 PCB - 50 - K/W
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(CL)DSS
V
(CL)DSS
Drain-source clamping voltage VIS = 0 V; ID = 10 mA 50 - - V Drain-source clamping voltage VIS = 0 V; IDM = 4 A; tp ≤ 300 µs; - - 70 V
δ ≤ 0.01 I I I R
DSS DSS DSS
DS(ON)
Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA Zero input voltage drain current VDS = 50 V; VIS = 0 V - 1 20 µA Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA Drain-source on-state IDM = 25 A; VIS = 5 V - 30 35 mΩ resistance tp ≤ 300 µs; δ ≤ 0.01
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
E t
T
d sc
DS(TO)
j(TO)
Short circuit load protection1Tmb = 25 ˚C; L ≤ 10 µH
Overload threshold energy VDD = 13 V; VIS = 5 V - 1.1 - J Response time VDD = 13 V; VIS = 5 V - 0.8 - ms
Over temperature protection
Threshold junction temperature VIS = 5 V; from ID ≥ 2 A
2
150 - - ˚C
INPUT CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
IS(TO)
I
IS
V
ISR
V
ISR
I
ISL
V
(BR)IS
R
IG
1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
3 The input voltage below which the overload protection circuits will be reset.
June 1996 3 Rev 1.000
Input threshold voltage VDS = 5 V; ID = 1 mA 1.0 1.5 2.0 V Input supply current VIS = 5 V; normal operation - 0.2 0.35 mA Protection reset voltage
3
2.0 2.6 3.5 V Protection reset voltage Tj = 150 ˚C 1.0 - ­Input supply current VIS = 5 V; protection latched 2 3.8 10 mA
Input clamp voltage II = 10 mA 6 - - V Input series resistance to gate of power MOSFET - 1.5 - kΩ
P
, which is always the case when VDS is less than V
DSM
ensures this condition.
maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES.
DSP
D
Philips Semiconductors Product specification
PowerMOS transistor BUK110-50GL Logic level TOPFET
TRANSFER CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
I
D(SC)
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figures and test circuits.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Forward transconductance VDS = 10 V; IDM = 25 A tp ≤ 300 µs; 17 28 - S
δ ≤ 0.01
Drain current
1
VDS = 13 V; VIS = 5 V - 60 - A
t
d on
t
r
t
d off
t
f
t
d on
t
r
t
d off
t
f
Turn-on delay time VDD = 13 V; VIS = 5 V - 2 - µs Rise time resistive load RL = 1.1 Ω -8-µs Turn-off delay time VDD = 13 V; VIS = 0 V - 8 - µs Fall time resistive load RL = 1.1 Ω -8-µs Turn-on delay time VDD = 13 V; VIS = 5 V - 3.7 - µs Rise time inductive load IDM = 11 A - 3.7 - µs Turn-off delay time VDD = 13 V; VIS = 0 V - 13 - µs Fall time inductive load IDM = 11 A - 1.4 - µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
S
Continuous forward current Tmb ≤ 25 ˚C; VIS = 0 V - 50 A
REVERSE DIODE CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SDS
t
rr
Forward voltage IS = 50 A; VIS = 0 V; tp = 300 µs - 1.0 1.5 V Reverse recovery time not applicable
2
----
ENVELOPE CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
L
d
L
s
1 During overload before short circuit load protection operates. 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 1996 4 Rev 1.000
Internal drain inductance Measured from upper edge of tab - 2.5 - nH
to centre of die
Internal source inductance Measured from source lead - 7.5 - nH
soldering point to source bond pad
Loading...
+ 7 hidden pages
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use