Philips BUK110-50DL Datasheet
Philips Semiconductors Product specification
PowerMOS transistor BUK110-50DL
Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in a 3 pin plastic surface V
DS
Continuous drain source voltage 50 V
mount envelope, intended as a I
D
Continuous drain current 45 A
general purpose switch for P
D
Total power dissipation 125 W
automotive systems and other T
j
Continuous junction temperature 150 ˚C
applications. R
DS(ON)
Drain-source on-state resistance 35 mΩ
APPLICATIONS I
ISL
Input supply current VIS = 5 V 650 µA
General controller for driving
lamps
motors
solenoids
heaters
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Lower operating input current
permits direct drive by
micro-controller
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
3 source
mb drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
13
mb
2
P
D
S
I
TOPFET
June 1996 1 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor BUK110-50DL
Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Continuous drain source voltage
1
- - 50 V
V
IS
Continuous input voltage - 0 6 V
I
D
Continuous drain current T
mb ≤
25 ˚C; VIS = 5 V - 45 A
I
D
Continuous drain current T
mb ≤
100 ˚C; VIS = 5 V - 28 A
I
DRM
Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 5 V - 180 A
P
D
Total power dissipation Tmb ≤ 25 ˚C - 125 W
T
stg
Storage temperature - -55 150 ˚C
T
j
Continuous junction temperature
2
normal operation - 150 ˚C
T
sold
Lead temperature during soldering - 250 ˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
ISP
Protection supply voltage
3
for valid protection 4 - V
Over temperature protection
V
DDP(T)
Protected drain source supply voltage VIS = 5 V - 50 V
Short circuit load protection
4
V
DDP(P)
Protected drain source supply VIS = 5 V - 16 V
voltage
5
P
DSM
Instantaneous overload dissipation Tmb = 25 ˚C - 2.1 kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
DROM
Repetitive peak clamping current VIS = 0 V - 45 A
E
DSM
Non-repetitive clamping energy Tmb ≤ 25 ˚C; IDM = 25 A; - 1 J
VDD ≤ 20 V; inductive load
E
DRM
Repetitive clamping energy Tmb ≤ 85 ˚C; IDM = 16 A; - 80 mJ
VDD ≤ 20 V; f = 250 Hz
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3 The input voltage for which the overload protection circuits are functional.
4 For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
5 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when VDS is less than V
DDP(P)
maximum.
June 1996 2 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor BUK110-50DL
Logic level TOPFET
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
R
th j-mb
Junction to mounting base - - 0.8 1 K/W
R
th j-a
Junction to ambient minimum footprint FR4 PCB - 50 - K/W
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(CL)DSS
Drain-source clamping voltage VIS = 0 V; ID = 10 mA 50 - - V
V
(CL)DSS
Drain-source clamping voltage VIS = 0 V; IDM = 4 A; tp ≤ 300 µs; - - 70 V
δ ≤ 0.01
I
DSS
Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA
I
DSS
Zero input voltage drain current VDS = 50 V; VIS = 0 V - 1 20 µA
I
DSS
Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA
R
DS(ON)
Drain-source on-state VIS = 5 V; IDM = 25 A; tp ≤ 300 µs; - 30 35 mΩ
resistance
1
δ ≤ 0.01
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Short circuit load protection2 Tmb = 25 ˚C; L ≤ 10 µH; RL = 10 mΩ
E
DS(TO)
Overload threshold energy VDD = 13 V; VIS = 5 V - 1.1 - J
t
d sc
Response time VDD = 13 V; VIS = 5 V - 0.8 - ms
I
D(SC)
Drain current
3
VDD = 13 V; VIS = 5 V - 75 - A
I
DM(SC)
Peak drain current
4
VIS = 5 V; VDD = 13 V - 200 - A
Over temperature protection
T
j(TO)
Threshold junction temperature VIS = 5 V; from ID ≥ 2 A
5
150 - - ˚C
TRANSFER CHARACTERISTIC
Tmb = 25 ˚C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
Forward transconductance VDS = 10 V; IDM = 25 A tp ≤ 300 µs; 17 28 - S
δ ≤ 0.01
1 Continuous input voltage. The specified pulse width is for the drain current.
2 Refer to OVERLOAD PROTECTION LIMITING VALUES.
3 Continuous drain-source supply voltage. Pulsed input voltage.
4 Continuous input voltage. Momentary short circuit load connection. (The higher peak current is due to the effect of capacitance Cgd).
5 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
June 1996 3 Rev 1.000
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