Philips BUK108-50GS Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK108-50GS TOPFET

DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount V

Continuous drain source voltage 50 V

envelope, intended as a general I

Continuous drain current 15 A

purpose switch for automotive P

Total power dissipation 40 W

systems and other applications. T

Continuous junction temperature 150 ˚C

DS(ON)

Drain-source on-state resistance 100 mΩ

APPLICATIONS V

= 10 V

General controller for driving

lamps motors solenoids heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads

Fig.1. Elements of the TOPFET.

PINNING - SOT404 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 input 2 drain 3 source

mb drain

POWER MOSFET

DRAIN

SOURCE

INPUT

O/V

CLAMP

LOGIC AND

PROTECTION

RIG

TOPFET

June 1996 1 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK108-50GS TOPFET

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

DSS

Continuous off-state drain source VIS = 0 V - 50 V voltage

Continuous input voltage - 0 11 V

Continuous drain current T

mb ≤

25 ˚C; VIS = 10 V - 15 A

Continuous drain current T

mb ≤

100 ˚C; VIS = 10 V - 9.5 A

DRM

Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 10 V - 60 A

Total power dissipation Tmb ≤ 25 ˚C - 40 W

stg

Storage temperature - -55 150 ˚C

Continuous junction temperature

normal operation - 150 ˚C

sold

Lead temperature during soldering - 250 ˚C

OVERLOAD PROTECTION LIMITING VALUES

With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ISP

Protection supply voltage

for valid protection 5 - V

Over temperature protection

DDP(T)

Protected drain source supply voltage VIS = 10 V - 50 V

Short circuit load protection

DDP(P)

Protected drain source supply voltage4VIS = 10 V - 20 V

VIS = 5 V - 35 V

DSM

Instantaneous overload dissipation Tmb = 25 ˚C - 0.6 kW

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

DROM

Repetitive peak clamping current VIS = 0 V - 15 A

DSM

Non-repetitive clamping energy Tmb ≤ 25 ˚C; IDM = 15 A; - 200 mJ

VDD ≤ 20 V; inductive load

DRM

Repetitive clamping energy Tmb ≤ 95 ˚C; IDM = 4 A; - 20 mJ

VDD ≤ 20 V; f = 250 Hz

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold T

j(TO)

the over temperature trip operates to protect the switch.

3 The input voltage for which the overload protection circuits are functional. 4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V

DDP(P)

maximum.

For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.

June 1996 2 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK108-50GS TOPFET

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

th j-mb

Junction to mounting base - - 2.5 3.1 K/W

th j-a

Junction to ambient minimum footprint FR4 PCB - 50 - K/W

(see fig. 33)

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

(CL)DSS

Drain-source clamping voltage VIS = 0 V; ID = 10 mA 50 - - V

(CL)DSS

Drain-source clamping voltage VIS = 0 V; IDM = 1 A; tp ≤ 300 µs; - - 70 V

δ ≤ 0.01

DSS

Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA

DSS

Zero input voltage drain current VDS = 50 V; VIS = 0 V - 1 20 µA

DSS

Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA

DS(ON)

Drain-source on-state IDM = 7.5 A; VIS = 10 V - 65 100 mΩ resistance tp ≤ 300 µs; δ ≤ 0.01 VIS = 5 V - 85 125 mΩ

OVERLOAD PROTECTION CHARACTERISTICS

TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Short circuit load protection1Tmb = 25 ˚C; L ≤ 10 µH

DS(TO)

Overload threshold energy VDD = 13 V; VIS = 10 V - 0.2 - J

d sc

Response time VDD = 13 V; VIS = 10 V - 0.8 - ms

Over temperature protection

j(TO)

Threshold junction temperature VIS = 10 V; from ID ≥ 0.5 A

150 - - ˚C

1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for

DSM

, which is always the case when VDS is less than V

DSP

maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES.

2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I

ensures this condition.

June 1996 3 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK108-50GS TOPFET

INPUT CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

IS(TO)

Input threshold voltage VDS = 5 V; ID = 1 mA 1.0 1.5 2.0 V

Input supply current VIS = 10 V; normal operation - 0.4 1.0 mA

ISR

Protection reset voltage

2.0 2.6 3.5 V

ISR

Protection reset voltage Tj = 150 ˚C 1.0 - -

ISL

Input supply current VIS = 10 V; protection latched 1.0 2.5 5.0 mA

(BR)IS

Input clamp voltage II = 10 mA 11 13 - V

Input series resistance to gate of power MOSFET - 4 - kΩ

TRANSFER CHARACTERISTICS

Tmb = 25 ˚C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Forward transconductance VDS = 10 V; IDM = 7.5 A tp ≤ 300 µs; 5 9 - S

δ ≤ 0.01

D(SC)

Drain current

VDS = 13 V; VIS = 10 V - 40 - A

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figures and test circuits.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

d on

Turn-on delay time VDD = 13 V; VIS = 10 V - 1 - µs

Rise time resistive load RL = 4 Ω -4-µs

d off

Turn-off delay time VDD = 13 V; VIS = 0 V - 10 - µs

Fall time resistive load RL = 4 Ω -5-µs

d on

Turn-on delay time VDD = 13 V; VIS = 10 V - 1 - µs

Rise time inductive load IDM = 3 A - 0.5 - µs

d off

Turn-off delay time VDD = 13 V; VIS = 0 V - 15 - µs

Fall time inductive load IDM = 3 A - 0.5 - µs

REVERSE DIODE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Continuous forward current Tmb ≤ 25 ˚C; VIS = 0 V - 15 A

1 The input voltage below which the overload protection circuits will be reset. 2 During overload before short circuit load protection operates.

June 1996 4 Rev 1.000

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