Philips BUK106-50L-S Technical data

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Philips Semiconductors Product specification

PowerMOS transistor BUK106-50L/S
Logic level TOPFET BUK106-50LP/SP

DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in a 5 pin plastic V
envelope, intended as a general I
purpose switch for automotive P
systems and other applications. T

D

R

DS

tot
j

DS(ON)

APPLICATIONS V

General controller for driving

lamps SYMBOL PARAMETER NOM. UNIT
motors
solenoids V
heaters BUK106-50L 5V

PSN

FEATURES FUNCTIONAL BLOCK DIAGRAM

Continuous drain source voltage 50 V
Continuous drain current 50 A
Total power dissipation 125 W
Continuous junction temperature 150 ˚C
Drain-source on-state resistance

= 5 V 35 mΩ

IS

VIS = 8 V 28 mΩ

Protection supply voltage

BUK106-50S 10 V

Vertical power DMOS output
stage
Low on-state resistance

PROTECTION SUPPLY

Logic and protection supply
from separate pin
Low operating supply current
Overload protection against
over temperature
Overload protection against
short circuit load

FLAG

INPUT

O/V

CLAMP

Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
5 V logic compatible input level

LOGIC AND

PROTECTION

Separate input pin
for higher frequency drive
ESD protection on input, flag
and protection supply pins
Over voltage clamping for turn
off of inductive loads
Both linear and switching
operation are possible Fig.1. Elements of the TOPFET.

PINNING - SOT263 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 input
2 flag
3 drain
4 protection supply
5 source

tab drain

tab

12345

leadform

263-01

Fig. 2. Type numbers ending with

suffix P refer to leadform 263-01. Fig. 3.

TOPFET

P
F

I

DRAIN

POWER
MOSFET

SOURCE

D

P

S

February 1993 1 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK106-50L/S
Logic level TOPFET BUK106-50LP/SP

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V

V
V

I

D

I

D

I

DRM

P
T
T

T

DSS

IS
FS
PS

tot
stg
j

sold

Voltages

Continuous off-state drain source VIS = 0 V - 50 V
voltage

1

Continuous input voltage - 0 11 V
Continuous flag voltage - 0 11 V
Continuous supply voltage - 0 11 V

Currents VIS = - 8 5 V
Continuous drain current T

Continuous drain current T
Repetitive peak on-state drain current Tmb ≤ 25 ˚C - 200 180 A

25 ˚C - 50 45 A

mb ≤

100 ˚C - 31 28 A

mb ≤

Thermal

Total power dissipation Tmb = 25 ˚C - 125 W
Storage temperature - -55 150 ˚C
Junction temperature

2

continuous - 150 ˚C

Lead temperature during soldering - 250 ˚C

OVERLOAD PROTECTION LIMITING VALUES

With the protection supply An n-MOS transistor turns on For internal overload protection to
connected, TOPFET can protect between the input and source to remain latched while the control
itself from two types of overload - quickly discharge the power circuit is high, external series input
over temperature and short circuit MOSFET gate capacitance. resistance must be provided. Refer
load. to INPUT CHARACTERISTICS.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VIS =85 - V

V

PSP

Protection supply voltage

3

for valid protection

BUK106-50L 4.4 4 - V
BUK106-50S 5.4 5 - V

V

DDP(T)

V

DDP(P)

P

DSM

Over temperature protection VPS = V
Protected drain source supply voltage VIS = 10 V; RI ≥ 2 kΩ -50V

V

Short circuit load protection VPS = V
Protected drain source supply voltage4VIS = 10 V; RI ≥ 2 kΩ -24V

V

Instantaneous overload dissipation - 4 kW

PSN

= 5 V; RI ≥ 1 kΩ -50V

IS

; L ≤ 10 µH

PSN

= 5 V; RI ≥ 1 kΩ -45V

IS

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold T
3 The minimum supply voltage required for correct operation of the overload protection circuits.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V

For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.

the over temperature trip operates to protect the switch.

j(TO)

DDP(P)

maximum.

February 1993 2 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK106-50L/S
Logic level TOPFET BUK106-50LP/SP

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

DRRM

E

DSM

E

DRM

Repetitive peak clamping drain current RIS ≥ 100 Ω
Non-repetitive inductive turn-off IDM = 27 A; RIS ≥ 100 Ω -1J
energy

2

Repetitive inductive turn-off energy RIS ≥ 100 Ω; Tmb ≤ 85 ˚C; - 80 mJ

IDM = 16 A; VDD ≤ 20 V;
f = 250 Hz

I

DIRM

Repetitive peak drain to input current3RIS = 0 Ω; tp ≤ 1 ms - 50 mA

REVERSE DIODE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

S

Continuous forward current Tmb = 25 ˚C; - 50 A

VIS = VPS = VFS = 0 V

THERMAL CHARACTERISTICS

1

-50A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R
R

th j-mb

th j-a

Junction to mounting base - - 0.8 1.0 K/W
Junction to ambient in free air - 60 - K/W

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(CL)DSR

V

(CL)DSR

I

DSS

I

DSR

I

DSR

R

DS(ON)

Drain-source clamping voltage RIS = 100 Ω; ID = 10 mA 50 - 65 V
Drain-source clamping voltage RIS = 100 Ω; IDM = 1 A; tp ≤ 300 µs; 50 - 70 V

δ ≤ 0.01
Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA
Drain source leakage current VDS = 50 V; RIS = 100 Ω;-120µA
Drain source leakage current VDS = 40 V; RIS = 100 Ω;

Tj = 125 ˚C - 10 100 µA

Drain-source on-state IDM = 25 A; VIS = 8 V - 22 28 mΩ
resistance tp ≤ 300 µs; δ ≤ 0.01 VIS = 5 V - 28 35 mΩ

1 The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to

2 While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at

3 Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source

become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS.

energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS.

voltage becoming positive.

February 1993 3 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK106-50L/S
Logic level TOPFET BUK106-50LP/SP

OVERLOAD PROTECTION CHARACTERISTICS

With adequate protection supply Provided there is adequate input Refer also to OVERLOAD
voltage TOPFET detects when one series resistance it switches off PROTECTION LIMITING VALUES
of the overload thresholds is and remains latched off until reset and INPUT CHARACTERISTICS.
exceeded. by the protection supply pin.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

E
t

d sc

DS(TO)

Overload threshold energy VDD = 13 V; VIS = 10 V - 550 - mJ
Response time VDD = 13 V; VIS = 10 V - 0.4 - ms

Over temperature protection VPS = V

Short circuit load protection1VPS = V

T

j(TO)

Threshold junction temperature from ID ≥ 2.5 A

TRANSFER CHARACTERISTICS

Tmb = 25 ˚C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

I

D

Forward transconductance VDS = 12 V; IDM = 25 A tp ≤ 300 µs; 17 28 - S

δ ≤ 0.01
Drain current

4

VDS = 13 V; VIS = 5 V - 80 - A

2

; Tmb = 25 ˚C; L ≤ 10 µH

PSN

PSN

3

VIS = 10 V 160 - A

150 - - ˚C

PROTECTION SUPPLY CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Protection supply

IPS, Protection supply current normal operation or
I

PSL

protection latched

BUK106-50L VPS = 5 V - 0.2 0.35 mA

V

PSR

Protection reset voltage

5

BUK106-50S VPS = 10 V - 0.4 1.0 mA

1.5 2.5 3.5 V

Tj = 150 ˚C 1.0 - - V

V

(CL)PS

Protection clamp voltage IP = 1.35 mA 11 13 - V

REVERSE DIODE CHARACTERISTICS

Tmb = 25 ˚C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

SDS

t

rr

1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for

2 At the appropriate nominal protection supply voltage for each type. Refer to QUICK REFERENCE DATA.
3 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I

4 During overload condition. Refer also to OVERLOAD PROTECTION LIMITING VALUES and CHARACTERISTICS.
5 The supply voltage below which the overload protection circuits will be reset.
6 The reverse diode of this type is not intended for applications requiring fast reverse recovery.

Forward voltage IS = 20 A; VIS = VPS = VFS = 0 V; - 0.9 1.2 V

tp = 300 µs
Reverse recovery time not applicable

P

, which is always the case when VDS is less than V

DSM

ensures this condition.

maximum.

DSP

6

----

D

February 1993 4 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK106-50L/S
Logic level TOPFET BUK106-50LP/SP

INPUT CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Normal operation

V
I

IS

V

R

R
R

IS(TO)

(CL)IS

ISL

IS

I

Input threshold voltage VDS = 5 V; ID = 1 mA 1.0 1.5 2.0 V

Tmb = 150 ˚C 0.5 - - V
Input current VIS = 10 V - 10 100 nA
Input clamp voltage II = 1 mA 11 13 - V

Overload protection latched

Input resistance

1

VPS = 5 V II = 5 mA; - 55 - Ω

Tmb = 150 ˚C - 95 - Ω

VPS = 10 V II = 5 mA; - 35 - Ω

Tmb = 150 ˚C - 60 - Ω

Application information

External input resistances for (see figure 29)
internal overvoltage clamping2RI = ∞ Ω;V

internal overload protection

3

RIS = ∞ Ω;V

> 30 V 100 - - Ω

DS

= 5 V 1 - - kΩ

II

VII = 10 V 2 - - kΩ

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C; RI = 50 Ω; RIS = 50 Ω (see figure 29); resistive load RL = 10 Ω. For waveforms see figure 28.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

t
t
t
t

d on

r

d off

f

Turn-on delay time VDD = 15 V; VIS: 0 V ⇒ 10 V - 10 - ns
Rise time - 35 - ns
Turn-off delay time VDD = 15 V; VIS: 10 V ⇒ 0 V - 280 - ns
Fall time - 120 - ns

CAPACITANCES

Tmb = 25 ˚C; f = 1 MHz

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

iss

C

oss

C

rss

C

pso

C

fso

Input capacitance VDS = 25 V; VIS = 0 V - 1250 1800 pF
Output capacitance VDS = 25 V; VIS = 0 V - 650 1000 pF
Reverse transfer capacitance VDS = 25 V; VIS = 0 V - 150 250 pF
Protection supply pin VPS = 10 V - 30 - pF

capacitance
Flag pin capacitance VFS = 10 V; VPS = 0 V - 20 - pF

1 The resistance of the internal transistor which discharges the power MOSFET gate capacitance when overload protection operates.

The external drive circuit should be such that the input voltage does not exceed V
operated. Refer also to figure for latched input characteristics.

2 Applications using a lower value for RIS would require external overvoltage protection.
3 For applications requiring a lower value for RI, an external overload protection strategy is possible using the flag pin to ‘tell’ the control circuit to

switch off the input.

minimum when the overload protection has

IS(TO)

February 1993 5 Rev 1.200