Philips BUK102-50GS Datasheet
Philips Semiconductors Product specification
PowerMOS transistor BUK102-50GS
TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected power MOSFET
in a 3 pin plastic envelope, intended V
DS
Continuous drain source voltage 50 V
as a general purpose switch for I
D
Continuous drain current 50 A
automotive systems and other P
D
Total power dissipation 125 W
applications. T
j
Continuous junction temperature 150 ˚C
R
DS(ON)
Drain-source on-state resistance 28 mΩ
APPLICATIONS V
IS
= 10 V
General controller for driving
lamps
motors
solenoids
heaters
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
10 V input level
Low threshold voltage
also allows 5 V control
Control of power MOSFET
and supply of overload
protection circuits
derived from input
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
3 source
tab drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
123
tab
P
D
S
I
TOPFET
January 1993 1 Rev 1.200
Philips Semiconductors Product specification
PowerMOS transistor BUK102-50GS
TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Continuous off-state drain source VIS = 0 V - 50 V
voltage
1
V
IS
Continuous input voltage - 0 11 V
I
D
Continuous drain current T
mb ≤
25 ˚C; VIS = 10 V - 50 A
I
D
Continuous drain current T
mb ≤
100 ˚C; VIS = 10 V - 31 A
I
DRM
Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 10 V - 200 A
P
D
Total power dissipation Tmb ≤ 25 ˚C - 125 W
T
stg
Storage temperature - -55 150 ˚C
T
j
Continuous junction temperature
2
normal operation - 150 ˚C
T
sold
Lead temperature during soldering - 250 ˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
ISP
Protection supply voltage
3
for valid protection 5 - V
Over temperature protection
V
DDP(T)
Protected drain source supply voltage VIS = 10 V - 50 V
Short circuit load protection
V
DDP(P)
Protected drain source supply voltage4VIS = 10 V - 16 V
VIS = 5 V - 24 V
P
DSM
Instantaneous overload dissipation Tmb = 25 ˚C - 2.1 kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
DROM
Repetitive peak clamping current VIS = 0 V - 50 A
E
DSM
Non-repetitive clamping energy Tmb ≤ 25 ˚C; IDM = 25 A; - 1 J
VDD ≤ 25 V; inductive load
E
DRM
Repetitive clamping energy Tmb ≤ 85 ˚C; IDM = 16 A; - 80 mJ
VDD ≤ 20 V; f = 250 Hz
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3 The input voltage for which the overload protection circuits are functional.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
DDP(P)
maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
January 1993 2 Rev 1.200
Philips Semiconductors Product specification
PowerMOS transistor BUK102-50GS
TOPFET
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
R
th j-mb
Junction to mounting base - - 0.8 1.0 K/W
R
th j-a
Junction to ambient in free air - 60 - K/W
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(CL)DSS
Drain-source clamping voltage VIS = 0 V; ID = 10 mA 50 - - V
V
(CL)DSS
Drain-source clamping voltage VIS = 0 V; IDM = 2 A; tp ≤ 300 µs; - - 70 V
δ ≤ 0.01
I
DSS
Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA
I
DSS
Zero input voltage drain current VDS = 50 V; VIS = 0 V - 1 20 µA
I
DSS
Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA
R
DS(ON)
Drain-source on-state IDM = 25 A; VIS = 10 V - 22 28 mΩ
resistance tp ≤ 300 µs; δ ≤ 0.01 VIS = 5 V - 30 35 mΩ
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Short circuit load protection1Tmb = 25 ˚C; L ≤ 10 µH
E
DS(TO)
Overload threshold energy VDD = 13 V; VIS = 10 V - 1.1 - J
t
d sc
Response time VDD = 13 V; VIS = 10 V - 0.8 - ms
Over temperature protection
T
j(TO)
Threshold junction temperature VIS = 10 V; from ID ≥ 2 A
2
150 - - ˚C
INPUT CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
IS(TO)
Input threshold voltage VDS = 5 V; ID = 1 mA 1.0 1.5 2.0 V
I
IS
Input supply current VIS = 10 V; normal operation - 0.4 1.0 mA
V
ISR
Protection reset voltage
3
2.0 2.6 3.5 V
V
ISR
Protection reset voltage Tj = 150 ˚C 1.0 - -
I
ISL
Input supply current VIS = 10 V; protection latched 2 6 20 mA
V
(BR)IS
Input clamp voltage II = 10 mA 11 13 - V
R
IG
Input series resistance to gate of power MOSFET - 1.5 - kΩ
1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when VDS is less than V
DSP
maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES.
2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
3 The input voltage below which the overload protection circuits will be reset.
January 1993 3 Rev 1.200
Philips Semiconductors Product specification
PowerMOS transistor BUK102-50GS
TOPFET
TRANSFER CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
Forward transconductance VDS = 10 V; IDM = 25 A tp ≤ 300 µs; 17 28 - S
δ ≤ 0.01
I
D(SC)
Drain current
1
VDS = 13 V; VIS = 10 V - 150 - A
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figures and test circuits.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
d on
Turn-on delay time VDD = 13 V; VIS = 10 V - 1.5 - µs
t
r
Rise time resistive load RL = 1.1 Ω - 5.5 - µs
t
d off
Turn-off delay time VDD = 13 V; VIS = 0 V - 13 - µs
t
f
Fall time resistive load RL = 1.1 Ω -9-µs
t
d on
Turn-on delay time VDD = 13 V; VIS = 10 V - 1.5 - µs
t
r
Rise time inductive load IDM = 11 A - 1.3 - µs
t
d off
Turn-off delay time VDD = 13 V; VIS = 0 V - 18 - µs
t
f
Fall time inductive load IDM = 11 A - 1.4 - µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
S
Continuous forward current Tmb ≤ 25 ˚C; VIS = 0 V - 50 A
REVERSE DIODE CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SDS
Forward voltage IS = 50 A; VIS = 0 V; tp = 300 µs - 1.0 1.5 V
t
rr
Reverse recovery time not applicable
2
----
ENVELOPE CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
L
d
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
1 During overload before short circuit load protection operates.
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
January 1993 4 Rev 1.200
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