Philips BUK101-50GS Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK101-50GS TOPFET

DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended V as a general purpose switch for I automotive systems and other P applications. T

D j

DS(ON)

APPLICATIONS V

General controller for driving

lamps motors solenoids heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads

INPUT

Continuous drain source voltage 50 V Continuous drain current 29 A Total power dissipation 75 W Continuous junction temperature 150 ˚C Drain-source on-state resistance 50 mΩ

= 10 V

DRAIN

O/V

CLAMP

RIG

LOGIC AND

PROTECTION

POWER MOSFET

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 input 2 drain

tab

TOPFET

3 source

tab drain

123

January 1993 1 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK101-50GS TOPFET

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V V

DRM

P T T

DSS

D stg j

sold

Continuous off-state drain source VIS = 0 V - 50 V voltage

Continuous input voltage - 0 11 V Continuous drain current T Continuous drain current T

25 ˚C; VIS = 10 V - 29 A

mb ≤

100 ˚C; VIS = 10 V - 18 A

mb ≤

Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 10 V - 120 A Total power dissipation Tmb ≤ 25 ˚C - 75 W Storage temperature - -55 150 ˚C Continuous junction temperature

normal operation - 150 ˚C

Lead temperature during soldering - 250 ˚C

OVERLOAD PROTECTION LIMITING VALUES

With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V P

ISP

DDP(T)

DDP(P)

DSM

Protection supply voltage

Over temperature protection

Protected drain source supply voltage VIS = 10 V - 50 V

Short circuit load protection

Protected drain source supply voltage4VIS = 10 V - 20 V Instantaneous overload dissipation Tmb = 25 ˚C - 1.3 kW

for valid protection 5 - V

VIS = 5 V - 35 V

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

DROM

DSM

Repetitive peak clamping current VIS = 0 V - 29 A Non-repetitive clamping energy Tmb ≤ 25 ˚C; IDM = 27 A; - 625 mJ

VDD ≤ 20 V; inductive load

DRM

Repetitive clamping energy Tmb ≤ 95 ˚C; IDM = 8 A; - 40 mJ

VDD ≤ 20 V; f = 250 Hz

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold T 3 The input voltage for which the overload protection circuits are functional. 4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V

January 1993 2 Rev 1.200

Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ

the over temperature trip operates to protect the switch.

j(TO)

For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.

DDP(P)

maximum.

Philips Semiconductors Product specification

PowerMOS transistor BUK101-50GS TOPFET

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R R

th j-mb

th j-a

Junction to mounting base - - 1.3 1.67 K/W Junction to ambient in free air - 60 - K/W

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

(CL)DSS

Drain-source clamping voltage VIS = 0 V; ID = 10 mA 50 - - V Drain-source clamping voltage VIS = 0 V; IDM = 2 A; tp ≤ 300 µs; - - 70 V

δ ≤ 0.01 I I I

DSS DSS DSS

DS(ON)

Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA Zero input voltage drain current VDS = 50 V; VIS = 0 V - 1 20 µA Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA

Drain-source on-state IDM = 13 A; VIS = 10 V - 35 50 mΩ resistance tp ≤ 300 µs; δ ≤ 0.01 VIS = 5 V - 45 60 mΩ

OVERLOAD PROTECTION CHARACTERISTICS

TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Short circuit load protection1Tmb = 25 ˚C; L ≤ 10 µH

E t

d sc

DS(TO)

j(TO)

Overload threshold energy VDD = 13 V; VIS = 10 V - 0.4 - J Response time VDD = 13 V; VIS = 10 V - 0.8 - ms

Over temperature protection

Threshold junction temperature VIS = 10 V; from ID ≥ 1 A

150 - - ˚C

INPUT CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

IS(TO)

ISR

ISL

(BR)IS

1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for

2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I

3 The input voltage below which the overload protection circuits will be reset.

January 1993 3 Rev 1.200

Input threshold voltage VDS = 5 V; ID = 1 mA 1.0 1.5 2.0 V Input supply current VIS = 10 V; normal operation - 0.4 1.0 mA Protection reset voltage

2.0 2.6 3.5 V Protection reset voltage Tj = 150 ˚C 1.0 - Input supply current VIS = 10 V; protection latched 1.0 2.5 4.0 mA

Input clamp voltage II = 10 mA 11 13 - V Input series resistance to gate of power MOSFET - 4 - kΩ

, which is always the case when VDS is less than V

DSM

ensures this condition.

maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES.

DSP

Philips Semiconductors Product specification

PowerMOS transistor BUK101-50GS TOPFET

TRANSFER CHARACTERISTICS

Tmb = 25 ˚C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

D(SC)

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figures and test circuits.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Forward transconductance VDS = 10 V; IDM = 13 A tp ≤ 300 µs; 10 16 - S

δ ≤ 0.01

Drain current

VDS = 13 V; VIS = 10 V - 80 - A

d on

d off

d on

d off

Turn-on delay time VDD = 13 V; VIS = 10 V - 1.5 - µs Rise time resistive load RL = 2.1 Ω -6-µs Turn-off delay time VDD = 13 V; VIS = 0 V - 18 - µs Fall time resistive load RL = 2.1 Ω -9-µs Turn-on delay time VDD = 10 V; VIS = 10 V - 2 - µs Rise time inductive load IDM = 6 A - 1 - µs Turn-off delay time VDD = 10 V; VIS = 0 V - 22 - µs Fall time inductive load IDM = 6 A - 1 - µs

REVERSE DIODE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Continuous forward current Tmb ≤ 25 ˚C; VIS = 0 V - 29 A

REVERSE DIODE CHARACTERISTICS

Tmb = 25 ˚C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

SDS

Forward voltage IS = 29 A; VIS = 0 V; tp = 300 µs - 1.0 1.5 V Reverse recovery time not applicable

----

ENVELOPE CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1 During overload before short circuit load protection operates. 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.

January 1993 4 Rev 1.200

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

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