Monolithic temperature andSYMBOLPARAMETERMAX.UNIT
overload protected logic level power
MOSFET in a 3 pin plasticV
envelope, intended as a generalI
purpose switch for automotiveP
systems and other applications.T
D
R
DS
D
j
DS(ON)
APPLICATIONSV
General controller for driving
lamps
motors
solenoids
heaters
FEATURESFUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Low operating input current
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
INPUT
Continuous drain source voltage50V
Continuous drain current26A
Total power dissipation75W
Continuous junction temperature150˚C
Drain-source on-state resistance60mΩ
= 5 V
IS
DRAIN
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
POWER
MOSFET
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - TO220ABPIN CONFIGURATIONSYMBOL
PINDESCRIPTION
1input
2drain
tab
TOPFET
I
3source
tabdrain
123
January 19931Rev 2.600
D
P
S
Philips SemiconductorsProduct specification
PowerMOS transistorBUK101-50GL
Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
1 A higher Tj is allowed as an overload condition but at the threshold T
2 The input voltage for which the overload protection circuits are functional.
3 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
Electrostatic discharge capacitorHuman body model;-2kV
voltageC = 250 pF; R = 1.5 kΩ
the over temperature trip operates to protect the switch.
j(TO)
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
DDP(P)
maximum.
January 19932Rev 2.600
Philips SemiconductorsProduct specification
PowerMOS transistorBUK101-50GL
Logic level TOPFET
THERMAL CHARACTERISTICS
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Thermal resistance
R
R
th j-mb
th j-a
Junction to mounting base--1.31.67K/W
Junction to ambientin free air-60-K/W
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
(CL)DSS
V
(CL)DSS
Drain-source clamping voltageVIS = 0 V; ID = 10 mA50--V
Zero input voltage drain current VDS = 12 V; VIS = 0 V-0.510µA
Zero input voltage drain current VDS = 50 V; VIS = 0 V-120µA
Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C-10100µA
Drain-source on-stateVIS = 5 V; IDM = 13 A; tp ≤ 300 µs;-4560mΩ
resistanceδ≤ 0.01
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
E
t
T
d sc
DS(TO)
j(TO)
Short circuit load protection1Tmb = 25 ˚C; L ≤ 10 µH
Overload threshold energyVDD = 13 V; VIS = 5 V-0.4-J
Response timeVDD = 13 V; VIS = 5 V-0.8-ms
Over temperature protection
Threshold junction temperature VIS = 5 V; from ID ≥ 1 A
2
150--˚C
INPUT CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
IS(TO)
I
IS
V
ISR
V
ISR
I
ISL
V
(BR)IS
R
IG
1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
3 The input voltage below which the overload protection circuits will be reset.
January 19933Rev 2.600
Input threshold voltageVDS = 5 V; ID = 1 mA1.01.52.0V
Input supply currentVIS = 5 V; normal operation-0.20.35mA
Protection reset voltage
1 During overload before short circuit load protection operates.
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
January 19934Rev 2.600
Internal drain inductanceMeasured from contact screw on-3.5-nH
tab to centre of die
Internal drain inductanceMeasured from drain lead 6 mm-4.5-nH
from package to centre of die
Internal source inductanceMeasured from source lead 6 mm-7.5-nH
from package to source bond pad
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