Philips BUK101-50DL Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK101-50DL Logic level TOPFET

DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic V envelope, intended as a general I purpose switch for automotive P systems and other applications. T

D j

DS(ON)

APPLICATIONS

General controller for driving

ISL

lamps motors solenoids heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Lower operating input current permits direct drive by micro-controller ESD protection on input pin Overvoltage clamping for turn off of inductive loads

INPUT

Continuous drain source voltage 50 V Continuous drain current 26 A Total power dissipation 75 W Continuous junction temperature 150 ˚C Drain-source on-state resistance 60 mΩ

Input supply current VIS = 5 V 650 µA

DRAIN

O/V

CLAMP

RIG

LOGIC AND

PROTECTION

POWER MOSFET

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 input 2 drain

tab

TOPFET

3 source

tab drain

123

April 1993 1 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor BUK101-50DL Logic level TOPFET

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V V I

DRM

P T T

DS IS

D stg j

sold

Continuous drain source voltage Continuous input voltage - 0 6 V Continuous drain current T Continuous drain current T Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 5 V - 100 A Total power dissipation Tmb ≤ 25 ˚C - 75 W Storage temperature - -55 150 ˚C Continuous junction temperature

Lead temperature during soldering - 250 ˚C

OVERLOAD PROTECTION LIMITING VALUES

With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ISP

Protection supply voltage

Over temperature protection

- - 50 V 25 ˚C; VIS = 5 V - 26 A

mb ≤

100 ˚C; VIS = 5 V - 16 A

mb ≤

normal operation - 150 ˚C

for valid protection 4 - V

V P

DDP(T)

DDP(P) DSM

Protected drain source supply voltage VIS = 5 V - 50 V

Short circuit load protection

Protected drain source supply voltage5VIS = 5 V - 20 V Instantaneous overload dissipation Tmb = 25 ˚C - 1.3 kW

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

DROM

DSM

Repetitive peak clamping current VIS = 0 V - 26 A Non-repetitive clamping energy Tmb ≤ 25 ˚C; IDM = 26 A; - 625 mJ

VDD ≤ 20 V; inductive load

DRM

Repetitive clamping energy Tmb ≤ 95 ˚C; IDM = 8 A; - 40 mJ

VDD ≤ 20 V; f = 250 Hz

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold T 3 The input voltage for which the overload protection circuits are functional. 4 For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. 5 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for

, which is always the case when VDS is less than V

DSM

DDP(P)

the over temperature trip operates to protect the switch.

j(TO)

maximum.

April 1993 2 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor BUK101-50DL Logic level TOPFET

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R R

th j-mb

th j-a

Junction to mounting base - - 1.3 1.67 K/W Junction to ambient in free air - 60 - K/W

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

(CL)DSS

Drain-source clamping voltage VIS = 0 V; ID = 10 mA 50 - - V Drain-source clamping voltage VIS = 0 V; IDM = 2 A; tp ≤ 300 µs; - - 70 V

δ ≤ 0.01 I I I R

DSS DSS DSS

DS(ON)

Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA Zero input voltage drain current VDS = 50 V; VIS = 0 V - 1 20 µA Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA Drain-source on-state VIS = 5 V; IDM = 13 A; tp ≤ 300 µs; - 45 60 mΩ resistance

δ ≤ 0.01

OVERLOAD PROTECTION CHARACTERISTICS

TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DS(TO)

d sc

D(SC)

DM(SC)

j(TO)

Short circuit load protection2Tmb = 25 ˚C; L ≤ 10 µH; RL = 10 mΩ

Overload threshold energy VDD = 13 V; VIS = 5 V - 0.4 - J Response time VDD = 13 V; VIS = 5 V - 0.8 - ms Drain current

Peak drain current

Over temperature protection

Threshold junction temperature VIS = 5 V; from ID ≥ 1 A

VDD = 13 V; VIS = 5 V - 45 - A

VIS = 5 V; VDD = 13 V - 105 - A

150 - - ˚C

TRANSFER CHARACTERISTIC

Tmb = 25 ˚C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1 Continuous input voltage. The specified pulse width is for the drain current. 2 Refer to OVERLOAD PROTECTION LIMITING VALUES. 3 Continuous drain-source supply voltage. Pulsed input voltage. 4 Continuous input voltage. Momentary short circuit load connection. (The higher peak current is due to the effect of capacitance Cgd). 5 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I

April 1993 3 Rev 1.100

Forward transconductance VDS = 10 V; IDM = 13 A tp ≤ 300 µs; 10 16 - S

δ ≤ 0.01

ensures this condition.

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