Philips BUK100-50DL Datasheet
Philips Semiconductors Product specification
PowerMOS transistor BUK100-50DL
Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected logic level power
MOSFET in a 3 pin plastic V
envelope, intended as a general I
purpose switch for automotive P
systems and other applications. T
D
R
DS
D
j
DS(ON)
APPLICATIONS
I
General controller for driving
ISL
lamps
motors
solenoids
heaters
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Lower operating input current
permits direct drive by
micro-controller
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
INPUT
Continuous drain source voltage 50 V
Continuous drain current 13.5 A
Total power dissipation 40 W
Continuous junction temperature 150 ˚C
Drain-source on-state resistance 125 mΩ
Input supply current VIS = 5 V 650 µA
DRAIN
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
POWER
MOSFET
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
tab
TOPFET
I
3 source
tab drain
123
November 1996 1 Rev 1.200
D
P
S
Philips Semiconductors Product specification
PowerMOS transistor BUK100-50DL
Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
D
I
D
I
DRM
P
T
T
T
DS
IS
D
stg
j
sold
Continuous drain source voltage
Continuous input voltage - 0 6 V
Continuous drain current T
Continuous drain current T
Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 5 V - 54 A
Total power dissipation Tmb ≤ 25 ˚C - 40 W
Storage temperature - -55 150 ˚C
Continuous junction temperature
Lead temperature during soldering - 250 ˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
ISP
Protection supply voltage
Over temperature protection
3
1
2
- - 50 V
25 ˚C; VIS = 5 V - 13.5 A
mb ≤
100 ˚C; VIS = 5 V - 8.5 A
mb ≤
normal operation - 150 ˚C
for valid protection 4 - V
V
V
P
DDP(T)
DDP(P)
DSM
Protected drain source supply voltage VIS = 5 V - 50 V
Short circuit load protection
4
Protected drain source supply voltage5VIS = 5 V - 24 V
Instantaneous overload dissipation Tmb = 25 ˚C - 0.6 kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
DROM
E
DSM
Repetitive peak clamping current VIS = 0 V - 15 A
Non-repetitive clamping energy Tmb ≤ 25 ˚C; IDM = 15 A; - 200 mJ
VDD ≤ 20 V; inductive load
E
DRM
Repetitive clamping energy Tmb ≤ 95 ˚C; IDM = 8 A; - 20 mJ
VDD ≤ 20 V; f = 250 Hz
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold T
3 The input voltage for which the overload protection circuits are functional.
4 For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
5 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
, which is always the case when VDS is less than V
DSM
DDP(P)
the over temperature trip operates to protect the switch.
j(TO)
maximum.
November 1996 2 Rev 1.200
Philips Semiconductors Product specification
PowerMOS transistor BUK100-50DL
Logic level TOPFET
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
R
R
th j-mb
th j-a
Junction to mounting base - - 2.5 3.1 K/W
Junction to ambient in free air - 60 - K/W
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(CL)DSS
V
(CL)DSS
Drain-source clamping voltage VIS = 0 V; ID = 10 mA 50 - - V
Drain-source clamping voltage VIS = 0 V; IDM = 1 A; tp ≤ 300 µs; - - 70 V
δ ≤ 0.01
I
I
I
R
DSS
DSS
DSS
DS(ON)
Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA
Zero input voltage drain current VDS = 50 V; VIS = 0 V - 1 20 µA
Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA
Drain-source on-state VIS = 5 V; IDM = 7.5 A; tp ≤ 300 µs; - 85 125 mΩ
resistance
1
δ ≤ 0.01
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
E
DS(TO)
t
d sc
I
D(SC)
I
DM(SC)
T
j(TO)
Short circuit load protection2Tmb = 25 ˚C; L ≤ 10 µH; RL = 10 mΩ
Overload threshold energy VDD = 13 V; VIS = 5 V - 0.2 - J
Response time VDD = 13 V; VIS = 5 V - 0.8 - ms
Drain current
Peak drain current
Over temperature protection
Threshold junction temperature VIS = 5 V; from ID ≥ 1 A
3
4
VDD = 13 V; VIS = 5 V - 25 - A
VIS = 5 V; VDD = 13 V - 60 - A
5
150 - - ˚C
TRANSFER CHARACTERISTIC
Tmb = 25 ˚C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
1 Continuous input voltage. The specified pulse width is for the drain current.
2 Refer to OVERLOAD PROTECTION LIMITING VALUES.
3 Continuous drain-source supply voltage. Pulsed input voltage.
4 Continuous input voltage. Momentary short circuit load connection. (The higher peak current is due to the effect of capacitance Cgd).
5 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
November 1996 3 Rev 1.200
Forward transconductance VDS = 10 V; IDM = 7.5 A tp ≤ 300 µs; 5 9 - S
δ ≤ 0.01
ensures this condition.
D
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