Philips buj403bx DATASHEETS
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ403BX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
fi
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1200 V
Collector-base voltage (open emitter) - 1200 V
Collector-emitter voltage (open base) - 525 V
Emitter-base voltage (open collector) 18 - V
Collector current (DC) - 6 A
Collector current peak value - 10 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Collector-emitter saturation voltage IC = 2 A; IB = 0.4 A 0.14 1.0 V
DC current gain IC = 2 A; VCE = 5 V 21 25
Fall time IC = 2.5 A; IB1 = 0.5 A 140 203 ns
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
CBO
EBO
tot
stg
j
Collector to emitter voltage VBE = 0 V - 1200 V
Collector to emitter voltage (open base) - 525 V
Collector to base voltage (open emitter) - 1200 V
Emitter-base voltage (open collector) 16 - V
Collector current (DC) - 6 A
Collector current peak value - 10 A
Base current (DC) - 3 A
Base current peak value - 5 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
123
e
November 1999 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ403BX
AVALANCHE ENERGY CAPABILITY
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCC = 150V; VBB = -5V; LC =
15mH;LB = 1µH
EAS Avalanche Energy Capability
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-hs
th j-a
Junction to heatsink with heatsink compound - 3.95 K/W
Junction to ambient in free air 55 - K/W
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES,ICBO
I
CES
I
CEO
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
Collector cut-off current
Collector cut-off current
Emitter cut-off current VEB = 9 V; IC = 0 A - - 1.0 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 525 - - V
Collector-emitter saturation voltage IC = 2.0 A;IB = 0.4 A - 0.14 1.0 V
Base-emitter saturation voltage IC = 2.0 A;IB = 0.4 A - 0.89 1.5 V
DC current gain IC = 1 mA; VCE = 5 V 19 28 -
DC current gain IC = 2.0 A; VCE = 5 V 17 21 25
1
2
Ths ≤ 110 ˚C - 1.0 mJ
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
CESMmax
; - - 0.5 mA
CESMmax
- - 0.2 mA
Tj = 125 ˚C
2
V
CEO
= V
(550V) - - 0.1 mA
CEOMmax
L = 25 mH
IC = 500 mA;VCE = 5 V 30 45 65
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
Turn-on time 0.6 0.95 µs
Turn-off storage time 4.5 6.4 µs
Turn-off fall time 0.4 0.59 µs
Switching times (inductive load) I
t
si
t
fi
Turn-off storage time 1.67 2.3 µs
Turn-off fall time 140 203 ns
Switching times (inductive load) I
t
si
t
fi
1 Fig. 14 without clamping voltage (VCL). Probe point is used to measure the BVCE at avalanche.
2 Measured with half sine-wave voltage (curve tracer).
Turn-off storage time 1.9 2.7 µs
Turn-off fall time 144 216 ns
November 1999 2 Rev 1.100
= 2.5 A; I
Con
RL = 75 ohms; V
= 2.5 A; I
Con
-VBB = 5 V
= 2.5 A; I
Con
-VBB = 5 V; Tj = 100 ˚C
= -I
Bon
Boff
= 4 V;
BB2
= 0.5 A; LB = 1 µH;
Bon
= 0.5 A; LB = 1 µH;
Bon
= 0.5 A;
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ403BX
ICon
90 %
10 %
tf
IBon
30-60 Hz
6V
300R
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
Fig.
90 %
IC
ton
IB
10 %
tr 30ns
-IBoff
4.
Switching times waveforms with resistive load.
ts
toff
IC / mA
250
100
10
0
VCE / V
Fig.2. Oscilloscope display for V
VIM
0
tp
T
R
B
VCEOsust
VCC
R
L
T.U.T.
min
CEOsust
VCC
LC
IBon
-VBB
.
Fig.
5.
LB
T.U.T.
Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
ICon
90 %
IC
10 %
ts
toff
IB
IBon
tf
t
t
-IBoff
Fig
.3.
Test circuit resistive load. VIM = -6 to +8 V
Fig.
6.
Switching times waveforms with inductive load.
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
Con
and I
requirements.
Bon
November 1999 3 Rev 1.100
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