Philips BUJ403A Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ403A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1200 V
Collector-Base voltage (open emitter) - 1200 V
Collector-emitter voltage (open base) - 550 V
Collector current (DC) - 6 A
Collector current peak value - 10 A
Total power dissipation Tmb ≤ 25 ˚C - 100 W
Collector-emitter saturation voltage IC = 2 A; IB = 0.4 A 0.15 1.0 V
DC current gain IC = 3 A; VCE = 5 V 15.5 Fall time IC=2.5 A; IB1=0.5 A 170 300 ns
PIN DESCRIPTION
tab
c
1 base
2 collector
b
3 emitter
tab collector
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
CBO
tot
stg
j
Collector to emitter voltage VBE = 0 V - 1200 V
Collector to emitter voltage (open base) - 550 V
Collector to base voltage (open emitter) - 1200 V
Collector current (DC) - 6 A
Collector current peak value - 10 A
Base current (DC) - 3 A
Base current peak value - 5 A
Total power dissipation Tmb ≤ 25 ˚C - 100 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
e
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Junction to mounting base - 1.25 K/W
Junction to ambient in free air 60 - K/W
December 1998 1 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ403A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES,ICBO
I
CES
I
CEO
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
h
FEsat
Collector cut-off current
Collector cut-off current
Emitter cut-off current VEB = 7 V; IC = 0 A - - 0.1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 550 - - V
Collector-emitter saturation voltage IC = 2.0 A; IB = 0.4 A - 0.15 1.0 V
Base-emitter saturation voltage IC = 2.0 A; IB = 0.4 A - 0.91 1.5 V
DC current gain IC = 1 mA; VCE = 5 V 13 25 -
DC current gain IC = 2.0 A; VCE = 5 V 13 18.5 25
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
t
s
t
f
t
s
t
f
Turn-on time - 0.5 µs
Turn-off storage time - 3 µs
Turn-off fall time - 0.3 µs
Switching times (inductive load) I
Turn-off storage time - 1.5 µs
Turn-off fall time 170 300 ns
Switching times (inductive load) I
Turn-off storage time - 1.8 µs
Turn-off fall time - 300 ns
1
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
V
CEO
= V
(550V) - - 0.1 mA
CEOMmax
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 500 mA;VCE = 5 V 20 30 47
IC = 3.0 A; VCE = 5 V - 15.5 -
= 2.5 A; I
Con
RL = 75 ohms; V
= 2.5 A; I
Con
-VBB = 5 V
= 2.5 A; I
Con
-VBB = 5 V; Tj = 100 ˚C
= -I
Bon
Bon
Bon
= 0.5 A;
Boff
= 4 V;
BB2
= 0.5 A; LB = 1 µH;
= 0.5 A; LB = 1 µH;
1 Measured with half sine-wave voltage (curve tracer).
December 1998 2 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ403A
ICon
90 %
10 %
tf
IBon
30-60 Hz
6V
300R
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
Fig.
90 %
IC
ton
IB
10 %
tr 30ns
-IBoff
4.
Switching times waveforms with resistive load.
ts
toff
IC / mA
250
200
100
0
VCE / V
Fig.2. Oscilloscope display for V
VIM
0
tp
T
R
B
min
VCEOsust
VCC
R
L
T.U.T.
CEOsust
VCC
LC
IBon
-VBB
.
Fig.
5.
LB
T.U.T.
Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
ICon
90 %
IC
10 %
ts
toff
IB
IBon
tf
t
t
-IBoff
Fig
.3.
Test circuit resistive load. VIM = -6 to +8 V
Fig.
6.
Switching times waveforms with inductive load.
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
Con
and I
requirements.
Bon
December 1998 3 Rev 1.200
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