Philips BUJ204A Datasheet

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BUJ204A

Silicon Diffused Power Transistor

Product speciﬁcation

August 1998

Philips Semiconductors Product speciﬁcation

Silicon Diffused Power Transistor BUJ204A

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CBO

V

CEO

I

C

I

CM

P

tot

V

CEsat

h

FEsat

t

f

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 V - 850 V Collector-Base voltage (open emitter) - 850 V Collector-emitter voltage (open base) - 450 V Collector current (DC) - 6 A Collector current peak value - 10 A Total power dissipation Tmb ≤ 25 ˚C - 100 W Collector-emitter saturation voltage 0.29 1.5 V DC current gain IC = 4 A; VCE = 5 V 12 Fall time Ic=2.5A,IB1=0.5A 88 150 ns

PIN DESCRIPTION

tab

c

1 base 2 collector

b

3 emitter

tab collector

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V V V I I I I P T T

CESM CEO

CBO C CM B BM

tot

stg

j

Collector to emitter voltage VBE = 0 V - 850 V Collector to emitter voltage (open base) - 450 V Collector to base voltage (open emitter) - 850 V Collector current (DC) - 6 A Collector current peak value - 10 A Base current (DC) - 2 A Base current peak value - 4 A Total power dissipation Tmb ≤ 25 ˚C - 100 W Storage temperature -65 150 ˚C Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R R

th j-mb

th j-a

Junction to mounting base - 1.25 K/W Junction to ambient in free air 60 - K/W

e

August 1998 1 Rev 1.000

Philips Semiconductors Product speciﬁcation

Silicon Diffused Power Transistor BUJ204A

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I I

CES CES

CBO CEO

Collector cut-off current

1

VBE = 0 V; VCE = V VBE = 0 V; VCE = V T

= 125 ˚C

j

V

= V

CBO

V

= V

CEO

(850V) - - 0.1 mA

CESMmax

(450V) - - 0.1 mA

CEOMmax

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

I

EBO

V

CEOsust

V

CEsat

V

BEsat

h

FE

h

FE

h

FEsat

Emitter cut-off current VEB = 9 V; IC = 0 A - - 0.1 mA Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V

L = 25 mH Collector-emitter saturation voltage IC = 4 A; IB = 0.8 A - 0.29 1.5 V Base-emitter saturation voltage IC = 4 A; IB = 0.8 A - 1.01 1.3 V DC current gain IC = 5 mA; VCE = 5 V 10 19 35

IC = 500 mA; VCE = 5 V 14 25 35 DC current gain IC = 2.5 A; VCE = 5 V 14.5 17 19.5

= 4 A; VCE = 5 V - 12 -

I

C

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (resistive load) I

t

on

t

s

t

f

Turn-on time 0.57 0.8 µs Turn-off storage time 3.4 4 µs Turn-off fall time 0.34 0.47 µs

Switching times (inductive load) I

t

s

t

f

Turn-off storage time 1.37 1.5 µs Turn-off fall time 88 150 ns

Switching times (inductive load) I

t

s

t

f

Turn-off storage time - 1.6 µs Turn-off fall time - 200 ns

= 2.5 A; I

Con

R

= 75 ohms; V

L

= 2.5 A; I

Con

-V

= 5 V

BB

= 2.5 A; I

Con

-V

= 5 V; Tj = 100 ˚C

BB

= -I

Bon

= 0.5 A;

Boff

= 4 V;

BB2

= 0.5 A; LB = 1 µH;

1 Measured with half sine-wave voltage (curve tracer).

August 1998 2 Rev 1.000

Philips Semiconductors Product speciﬁcation

Silicon Diffused Power Transistor BUJ204A

ICon

90 %

10 %

tf

IBon

30-60 Hz

6V

Fig.1. Test circuit for V

300R

100-200R

Horizontal

Oscilloscope

Vertical

1R

.

CEOsust

+ 50v

Fig.

90 %

IC

ton

IB

10 %

tr 30ns

-IBoff

4.

Switching times waveforms with resistive load.

ts toff

IC / mA

250 200

100

0

VCE / V

Fig.2. Oscilloscope display for V

VIM

0

tp

T

R

B

min

VCEOsust

VCC

R

L

T.U.T.

CEOsust

VCC

LC

IBon

-VBB

.

= 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

V

CC

IC

IB

Fig.

5.

LB

Test circuit inductive load.

ICon

90 %

10 %

ts toff

IBon

tf

T.U.T.

t

-IBoff

Fig

.3.

Test circuit resistive load. VIM = -6 to +8 V

V

= 250 V; tp = 20 µs; δ = tp / T = 0.01.

R

CC

and RL calculated from I

B

Con

and I

requirements.

Bon

Fig.

6.

Switching times waveforms with inductive load.

August 1998 3 Rev 1.000