Philips BUJ202AX Datasheet
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BUJ202AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
t
f
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 850 V
Collector-Base voltage (open emitter) - 850 V
Collector-emitter voltage (open base) - 450 V
Collector current (DC) - 2 A
Collector current peak value - 3 A
Total power dissipation Tmb ≤ 25 ˚C - 18 W
Collector-emitter saturation voltage IC = 1.0 A;IB = 0.2 A - 1.0 V
Fall time Ic=1A,IB1=0.2A,IB2=0.2A 88 150 ns
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
CBO
tot
stg
j
Collector to emitter voltage VBE = 0 V - 850 V
Collector to emitter voltage (open base) - 450 V
Collector to base voltage (open emitter) - 850 V
Collector current (DC) - 2 A
Collector current peak value - 3 A
Base current (DC) - 0.75 A
Base current peak value - 1 A
Total power dissipation Tmb ≤ 25 ˚C - 18 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Junction to mounting base - 7.2 K/W
Junction to ambient in free air 55 - K/W
123
e
August 1998 1 Rev 1.000
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BUJ202AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
Collector cut-off current
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 1.5 mA
CESMmax
- - 0.2 mA
Emitter cut-off current VEB = 5 V; IC = 0 A - - 1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 1 A; IB = 0.2 A - - 1.0 V
Base-emitter saturation voltage IC = 1 A; IB = 0.2 A - - 1.1 V
DC current gain IC = 10 mA; VCE = 5 V 10 - 35
IC = 100 mA; VCE = 5 V 14 - 35
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
Turn-on time - 0.5 µs
Turn-off storage time - 3.5 µs
Turn-off fall time - 1.4 µs
Switching times (inductive load) I
t
s
t
f
Turn-off storage time - 1.4 µs
Turn-off fall time 88 150 ns
Switching times (inductive load) I
t
s
t
f
Turn-off storage time - 1.5 µs
Turn-off fall time - 200 ns
= 1.0 A; I
Con
RL = 75 ohms; V
= 1.0 A; I
Con
-VBB = 5 V
= 1.0 A; I
Con
= -I
Bon
Boff
= 4 V;
BB2
= 0.2 A; LB = 1 µH;
Bon
= 0.2 A; LB = 1 µH;
Bon
-VBB = 5 V; Tj = 100 ˚C
= 0.2 A;
1 Measured with half sine-wave voltage (curve tracer).
August 1998 2 Rev 1.000
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