Philips BUJ105A Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ105A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 700 V
Collector-Base voltage (open emitter) - 700 V
Collector-emitter voltage (open base) - 400 V
Collector current (DC) - 8 A
Collector current peak value - 16 A
Total power dissipation Tmb ≤ 25 ˚C - 80 W
Collector-emitter saturation voltage IC = 4.0 A;IB = 0.8 A 0.3 1.0 V
IC = 4.0 A; VCE = 5 V 11 15
Fall time IC = 5 A; IB1 = 1 A 20 50 ns
PIN DESCRIPTION
tab
c
1 base
2 collector
b
3 emitter
tab collector
123
LIMITING VALUES8
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
CBO
tot
stg
j
Collector to emitter voltage VBE = 0 V - 700 V
Collector to emitter voltage (open base) - 400 V
Collector to base voltage (open emitter) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 16 A
Base current (DC) - 4 A
Base current peak value - 8 A
Total power dissipation Tmb ≤ 25 ˚C - 80 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
e
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
February 1999 1 Rev 1.000
Junction to mounting base - 1.56 K/W
Junction to ambient in free air 60 - K/W
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ105A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES,ICBO
I
CES
I
CEO
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
Collector cut-off current
Collector cut-off current V
Emitter cut-off current VEB = 9 V; IC = 0 A - - 1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 400 - - V
Collector-emitter saturation voltage IC = 4.0 A;IB = 0.8 A - 0.3 1.0 V
Base-emitter saturation voltage IC = 4.0 A;IB = 0.8 A - 1.0 1.5 V
DC current gain IC = 1 mA; VCE = 5 V 10 14 34
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
t
s
t
f
t
s
t
f
Turn-on time 0.65 1 µs
Turn-off storage time 1.8 2.5 µs
Turn-off fall time 0.3 0.5 µs
Switching times (inductive load) I
Turn-off storage time 1.2 1.7 µs
Turn-off fall time 20 50 ns
Switching times (inductive load) I
Turn-off storage time 1.4 1.9 µs
Turn-off fall time 25 100 ns
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CEO
= V
(400V) - - 0.1 mA
CEOMmax
CESMmax
; - - 0.5 mA
CESMmax
- - 0.2 mA
L = 25 mH
IC = 500 mA; VCE = 5 V 13 23 36
IC = 4.0 A; VCE = 5 V 8 11 15
= 5 A; I
Con
RL = 75 ohms; V
= 5 A; I
Con
-VBB = 5 V
= 5 A; I
Con
-VBB = 5 V; Tj = 100 ˚C
= -I
Bon
Bon
Bon
= 1 A;
Boff
= 4 V;
BB2
= 1 A; LB = 1 µH;
= 1 A; LB = 1 µH;
1 Measured with half sine-wave voltage (curve tracer).
February 1999 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ105A
ICon
90 %
10 %
tf
IBon
30-60 Hz
6V
300R
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
Fig.
90 %
IC
ton
IB
10 %
tr 30ns
-IBoff
4.
Switching times waveforms with resistive load.
ts
toff
IC / mA
250
100
10
0
VCE / V
Fig.2. Oscilloscope display for V
VIM
0
tp
T
R
B
min
VCEOsust
VCC
R
L
T.U.T.
CEOsust
VCC
LC
IBon
-VBB
.
Fig.
= 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
VCC
IC
IB
5.
LB
Test circuit inductive load.
ICon
90 %
10 %
ts
toff
IBon
tf
T.U.T.
t
t
-IBoff
Fig
.3.
Test circuit resistive load. VIM = -6 to +8 V
Fig.
6.
Switching times waveforms with inductive load.
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from I
Con
and I
requirements.
Bon
February 1999 3 Rev 1.000
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