Philips BUJ103A Datasheet

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BUJ103A

Silicon Diffused Power Transistor

Product speciﬁcation

August 1998

Philips Semiconductors Product speciﬁcation

Silicon Diffused Power Transistor BUJ103A

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CBO

V

CEO

I

C

I

CM

P

tot

V

CEsat

h

FEsat

t

f

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 V - 700 V Collector-Base voltage (open emitter) - 700 V Collector-emitter voltage (open base) - 400 V Collector current (DC) 2 - 4 A Collector current peak value - 8 A Total power dissipation Tmb ≤ 25 ˚C - 80 W Collector-emitter saturation voltage IC = 3.0 A;IB = 0.6 A 0.25 1.0 V

IC = 3.0 A; VCE = 5 V 12.5 -

Fall time Ic=2A,IB1=0.4A 33 80 ns

PIN DESCRIPTION

tab

c

1 base 2 collector

b

3 emitter

tab collector

123

e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V V V I I I I P T T

CESM CEO

CBO C CM B BM

tot

stg j

Collector to emitter voltage VBE = 0 V - 700 V Collector to emitter voltage (open base) - 400 V Collector to base voltage (open emitter) - 700 V Collector current (DC) - 4 A Collector current peak value - 8 A Base current (DC) - 2 A Base current peak value - 4 A Total power dissipation Tmb ≤ 25 ˚C - 80 W Storage temperature -65 150 ˚C Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R R

th j-mb

th j-a

Junction to mounting base - 1.56 K/W Junction to ambient in free air 60 - K/W

August 1998 1 Rev 1.000

Philips Semiconductors Product speciﬁcation

Silicon Diffused Power Transistor BUJ103A

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES

I

CES

I

CBO

I

CEO

I

EBO

V

CEOsust

V

CEsat

V

BEsat

h

FE

h

FE

h

FEsat

Collector cut-off current

Collector cut-off current Emitter cut-off current VEB = 7 V; IC = 0 A - - 0.1 mA

Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 400 - - V Collector-emitter saturation voltage IC = 3.0 A; IB = 0.6 A - 0.25 1.0 V

Base-emitter saturation voltage IC = 3.0 A; IB = 0.6 A - 0.97 1.5 V DC current gain IC = 1 mA; VCE = 5 V 10 17 32

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (resistive load) I

t

on

t

s

t

f

t

s

t

f

t

s

t

f

Turn-on time 0.52 0.6 µs Turn-off storage time 2.7 3.2 µs Turn-off fall time 0.3 0.43 µs

Switching times (inductive load) I Turn-off storage time 1.2 1.4 µs

Turn-off fall time 33 80 ns Switching times (inductive load) I

Turn-off storage time - 1.8 µs Turn-off fall time - 200 ns

1

VBE = 0 V; VCE = V VBE = 0 V; VCE = V T

= 125 ˚C

j

V

= V

CBO

V

= V

CEO

(700V) - - 0.1 mA

CESMmax

(400V) - - 0.1 mA

CEOMmax

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

L = 25 mH

IC = 500 mA; VCE = 5 V 12 20 32 IC = 2.0 A; VCE = 5 V 13.5 16 20

= 3.0 A; VCE = 5 V - 12.5 -

I

C

= 2.5 A; I

Con

= 75 ohms; V

R

L

= 2 A; I

Con

-V

= 5 V

BB

= 2 A; I

Con

-V

= 5 V; Tj = 100 ˚C

BB

= -I

BB2

= 0.5 A;

Boff

= 4V;

Bon

= 0.4 A; LB = 1 µH;

Bon

= 0.4 A; LB = 1 µH;

Bon

1 Measured with half sine-wave voltage (curve tracer).

August 1998 2 Rev 1.000

Philips Semiconductors Product speciﬁcation

Silicon Diffused Power Transistor BUJ103A

ICon

90 %

10 %

tf

IBon

30-60 Hz

6V

Fig.1. Test circuit for V

300R

100-200R

Horizontal

Oscilloscope

Vertical

1R

.

CEOsust

+ 50v

Fig.

90 %

IC

ton

IB

10 %

tr 30ns

-IBoff

4.

Switching times waveforms with resistive load.

ts toff

IC / mA

250 200

100

0

VCE / V

Fig.2. Oscilloscope display for V

VIM 0

tp

T

R

B

min

VCEOsust

VCC

R

L

T.U.T.

CEOsust

VCC

LC

IBon

-VBB

.

= 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

V

CC

IC

IB

Fig.

5.

LB

Test circuit inductive load.

ICon

90 %

10 %

ts toff

IBon

tf

T.U.T.

t

-IBoff

.3.

Fig

R

B

Test circuit resistive load. VIM = -6 to +8 V

V

= 250 V; tp = 20 µs; δ = tp / T = 0.01.

CC

and RL calculated from I

Con

and I

requirements.

Bon

6.

Switching times waveforms with inductive load.

Fig.

August 1998 3 Rev 1.000