Philips BUJ101AU Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ101AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope
intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FE
t
fi
PINNING - SOT533 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 700 V
Collector-Base voltage (open emitter) - 700 V
Collector-emitter voltage (open base) - 400 V
Collector current (DC) - 1.5 A
Collector current peak value - 3 A
Total power dissipation Tmb ≤ 25 ˚C - 50 W
Collector-emitter saturation voltage IC = 1.0A;IB = 200 mA 0.32 1.0 V
IC = 1.0A;VCE = 5 V 11 14
Fall time (Inductive) IC = 1.0A,I
= 200mA 50 70 ns
BON
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
1
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
CBO
tot
stg
j
Collector to emitter voltage VBE = 0 V - 700 V
Collector to emitter voltage (open base) - 400 V
Collector to base voltage (open emitter) - 700 V
Collector current (DC) - 1.5 A
Collector current peak value - 3 A
Base current (DC) - 0.75 A
Base current peak value - 1.5 A
Total power dissipation Tmb ≤ 25 ˚C - 50 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Top view
23
MBK915
e
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Junction to mounting base - 2.5 K/W
Junction to ambient in free air 70 - K/W
September 1999 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ101AU
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES,ICBO
I
CES
I
CEO
I
EBO
V
CEOsust
V
CEsat
V
BEsat
Collector cut-off current
Collector cut-off current VCE = V
Emitter cut-off current VEB = 9 V; IC = 0 A - 0.04 100 µA
Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 400 - - V
Collector-emitter saturation voltage IC = 1.0 A; IB = 200mA - 0.32 1.0 V
Base-emitter saturation voltage IC = 1.0 A; IB =200mA - 1.01 1.3 V
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
(400V) - - 100 µA
CESMmax
CESMmax
; - 22 500 µA
CESMmax
- 0.9 100 µA
L = 25 mH
h
FE
h
FE
h
FE
DC current gain IC = 10mA; VCE = 5 V 11 20 27
IC = 100mA; VCE = 5 V 12.5 21 31
IC = 1.0A; VCE = 5 V 7.5 11 14.5
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
Turn-on time 0.65 0.88 µs
Turn-off storage time 0.88 1.2 µs
Turn-off fall time 250 338 ns
Switching times (inductive load) I
t
s
t
f
Turn-off storage time 0.51 0.7 µs
Turn-off fall time 50 70 ns
Switching times (inductive load) I
t
s
t
f
Turn-off storage time - 1.4 µs
Turn-off fall time - 130 ns
= 1.0 A; I
Con
RL = 75 ohms; V
= 1.0 A; I
Con
-VBB = 5 V
= 1.0 A; I
Con
= -I
Bon
Boff
= 4 V;
BB2
= 200mA; LB = 1 µH;
Bon
= 200mA; LB = 1 µH;
Bon
-VBB = 5 V; Tj = 100 ˚C
= 200mA;
1 Measured with half sine-wave voltage (curve tracer).
September 1999 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ101AU
30-60 Hz
IC / mA
250
100
6V
300R
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
!
Zth j-mb / (K/W)
10
D=
0.5
1
0.2
0.1
0.05
0.1
0.01
0.02
0
10us 1ms 0.1s 10ms
t / s
t
p
P
D
T
Fig.4. Transient thermal impedance.
Zth
HFE
30
125 C
20
15
10
25 C
5
= f(t); parameter D = tp/T
j-lead
-40 C
VCE = 1V
D =
p
t
T
t
10
0
VCE / V
VCEOsust
Fig.2. Oscilloscope display for V
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tmb / C
Fig.3. Normalised power dissipation.
PD% = 100⋅PD/PD
= f (Tmb)
25˚C
min
CEOsust
1
.
0.001 0.01 0.1 1 2 3 5
IC/A
Fig.5. Typical DC current gain. hFE = f(IC)
parameter V
HFE
30
10
25 C
VCE = 5V
1
0.001 0.01 0.1 1 2 3 5
CE
125 C
-40 C
IC/A
Fig.6. Typical DC current gain. hFE = f(IC)
parameter V
CE
September 1999 3 Rev 1.000
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