Philips BU508DX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT399 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - 1.0 V
Collector saturation current f = 16kHz 4.5 - A
Diode forward voltage IF = 4.5 A 1.6 2.0 V
Fall time I
= 4.5 A; f = 16kHz 0.7 - µs
Csat
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
R
th j-hs
th j-hs
th j-a
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
123
e
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
V
F
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut off current VEB = 6.0 V; IC = 0 A - - 10 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A - - 1.0 V
Base-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - - 1.3 V
DC current gain IC = 100 mA; VCE = 5 V 6 13 30
Diode forward voltage IF = 4.5 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
f
T
C
C
t
s
t
f
Transition frequency at f = 5 MHz IC = 0.1 A;VCE = 5 V 7 - MHz
Collector capacitance at f = 1MHz VCB = 10 V 125 - pF
Switching times (16 kHz line I
deflection circuit) I
= 4.5 A;Lc 1 mH;Cfb = 4 nF
Csat
= 1.4 A; LB = 6 µH; -VBB = -4 V;
B(end)
-IBM = 2.25 A
Turn-off storage time 6.5 - µs
Turn-off fall time 0.7 - µs
1 Measured with half sine-wave voltage (curve tracer).
July 1998 2 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DX
IC
IB
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.1. Switching times waveforms.
ts
IBend
tf
ICsat
IBend
ICsat
90 %
10 %
+ 150 v nominal
adjust for ICsat
t
1mH
t
D.U.T.
IBend
t
-VBB
LB
12nF
Fig.3. Switching times test circuit
h
100
FE
BU508AD
t
10
t
1
- IBM
Fig.2. Switching times definitions.
July 1998 3 Rev 1.200
0.1 1 10
IC/A
Fig.4. Typical DC current gain. hFE = f (IC)
parameter V
CE
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