Philips BU508DW Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily
for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - 1.0 V
Collector saturation current f = 16kHz 4.5 - A
Diode forward voltage IF = 4.5 A 1.6 2.0 V
Fall time I
= 4.5 A; f = 16kHz 0.7 - µs
Csat
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
2
1
3
e
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
V
CEOsust
V
CEsat
V
BEsat
h
FE
V
F
Collector cut-off current
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A - - 1.0 V
Base-emitter saturation voltage IC = 4.5 A; IB = 2 A - - 1.1 V
DC current gain IC = 100 mA; VCE = 5 V 6 13 30
Diode forward voltage IF = 4.5 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
f
T
C
C
t
s
t
f
Transition frequency at f = 5 MHz IC = 0.1 A;VCE = 5 V 7 - MHz
Collector capacitance at f = 1MHz VCB = 10 V 125 - pF
Switching times (16 kHz line I
deflection circuit) I
Turn-off storage time 6.5 - µs
Turn-off fall time 0.7 - µs
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
= 4.5 A;Lc= 1 mH;Cfb = 4 nF
Csat
= 1.4 A; LB = 6 µH; -VBB = -4 V;
B(end)
1 Measured with half sine-wave voltage (curve tracer).
July 1998 2 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DW
IC
IB
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.1. Switching times waveforms.
ts
IBend
tf
ICsat
IBend
ICsat
90 %
10 %
+ 150 v nominal
adjust for ICsat
t
1mH
t
D.U.T.
IBend
t
-VBB
LB
12nF
Fig.3. Switching times test circuit
h
100
FE
BU508AD
t
10
t
1
- IBM
Fig.2. Switching times definitions.
July 1998 3 Rev 1.200
0.1 1 10
IC/A
Fig.4. Typical DC current gain. hFE = f (IC)
parameter V
CE
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