Philips BU508AF Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in
horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT199 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Ths ≤ 25 ˚C - 34 W
Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - 1.0 V
Collector saturation current f = 16 kHz 4.5 - A
Fall time I
= 4.5 A; f = 16kHz 0.7 - µs
Csat
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 700 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Total power dissipation Ths ≤ 25 ˚C - 34 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
R
th j-hs
th j-hs
th j-a
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
12
3
e
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEOsus
V
CEsat
V
BEsat
h
FE
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 6.0 V; IC = 0 A - - 10 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A - - 1.0 V
Base-emitter saturation voltage IC = 4.5 A; IB = 2 A - - 1.1 V
DC current gain IC = 100 mA; VCE = 5 V 6 13 30 -
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
f
T
C
C
t
s
t
f
Transition frequency at f = 5 MHz IC = 0.1 A;VCE = 5 V 7 - MHz
Collector capacitance at f = 1MHz VCB = 10 V 125 - pF
Switching times (16 kHz line I
deflection circuit) I
= 4.5 A;Lc 1 mH;Cfb = 4 nF
Csat
= 1.4 A; LB = 6 µH; -VBB = -4 V;
B(end)
-IBM = 2.25 A
Turn-off storage time 6.5 - µs
Turn-off fall time 0.7 - µs
1 Measured with half sine-wave voltage (curve tracer).
July 1998 2 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AF
30-60 Hz
IC / mA
250
200
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
1mH
t
t
100
0
VCE / V
Fig.2. Oscilloscope display for V
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.3. Switching times waveforms.
min
VCEOsust
CEOsust
ICsat
IBend
IBend
LB
D.U.T.
12nF
BY228
-VBB
.
t
t
t
Fig.5. Switching times test circuit
h
FE
100
10
1
0.1 1 10
IC/A
BU508AD
.
Fig.6. Typical DC current gain. hFE = f (IC)
parameter V
CE
July 1998 3 Rev 1.200
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