Philips BU506D, BU506 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BU506; BU506D
Silicon diffused power transistors
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors Product specification
Silicon diffused power transistors BU506; BU506D
DESCRIPTION
High-voltage, high-speed, switching
NPN power transistor in a TO-220AB
package. The BU506D has an
integrated efficiency diode.
APPLICATIONS
• Horizontal deflection circuits of
colour television receivers
• Line-operated switch-mode
applications.
PINNING
PIN DESCRIPTION
1 base
2 collector; connected to
mounting base
3 emitter
2
1
123
MBB008
MBK106
3
a. BU506. b. BU506D.
Fig.1 Simplified outline (TO-220AB) and symbols.
1
MBB077
2
3
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
V
CEsat
collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector-emitter saturation
IC= 3 A; IB= 1.33 A; see Fig.6 − 1V
voltage
V
F
I
Csat
I
C
I
CM
P
tot
t
f
diode forward voltage (BU506D) IF= 3 A; see Fig.10 1.5 − V
collector saturation current − 3A
collector current (DC) see Fig.2 − 5A
collector current (peak value) see Fig.2 − 8A
total power dissipation Tmb≤ 25 °C; see Fig.3 − 100 W
fall time inductive load; see Fig.9 0.7 −µs
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
thermal resistance from junction to mounting base 1.25 K/W
1997 Aug 13 1
Philips Semiconductors Product specification
Silicon diffused power transistors BU506; BU506D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector saturation current − 3A
collector current (DC) see Fig.2 − 5A
collector current (peak value) see Fig.2 − 8A
base current (DC) − 3A
base current (peak value) − 5A
total power dissipation Tmb≤ 25 °C; see Fig.3 − 100 W
storage temperature −65 +150 °C
junction temperature − 150 °C
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
V
CEsat
V
BEsat
V
F
I
CES
collector-emitter sustaining voltage see Figs 4 and 5 700 −−V
collector-emitter saturation voltage IC= 3 A; IB= 1.33 A; see Fig.6 −−1V
base-emitter saturation voltage IC= 3 A; IB= 1.33 A; see Fig.7 −−1.3 V
diode forward voltage (BU506D) IF= 3 A; see Fig.10 − 1.5 2.2 V
collector-emitter cut-off current VCE=V
V
CE=VCESmax
; VBE= 0; note 1 −−0.5 mA
CESmax
; VBE=0;
−−1mA
Tj= 125 °C; note 1
I
EBO
h
FE
emitter-base cut-off current VEB=6V; IC=0 −−10 mA
DC current gain VCE=5V; IC= 100 mA;
61330
see Fig.8
Switching times in horizontal deflection circuit (see Fig.9)
t
s
storage time ICM= 3 A; I
B(end)
= 1A;
− 6.5 −µs
LB=12µH
t
f
fall time ICM= 3 A; I
B(end)
= 1A;
− 0.7 −µs
LB=12µH
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13 2
Philips Semiconductors Product specification
Silicon diffused power transistors BU506; BU506D
handbook, full pagewidth
10
10
(A)
2
10
I
C
I
CM max
10
I
C max
1
−1
−2
I
II
MGB923
−3
10
−4
10
110
Tmb=25°C.
I -Region of permissible DC operation.
II -Permissible extension for repetitive pulse operation.
10
Fig.2 Forward bias SOAR.
1997 Aug 13 3
2
3
10
VCE (V)
4
10
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