Philips BU505F, BU505DF Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BU505F; BU505DF
Silicon diffused power transistors
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors Product specification
Silicon diffused power transistors BU505F; BU505DF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
The BU505DF has an integrated
efficiency diode.
2
2
APPLICATIONS
• Horizontal deflection circuits of
colour television receivers.
PINNING
123
1
MBB008
3
a. BU505F. b. BU505DF.
1
MBB077
3
PIN DESCRIPTION
1 base
Front view
MBC668
2 collector
3 emitter
mb mounting base; electrically
Fig.1 Simplified outline (SOT186) and symbols.
isolated from all pins
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
V
CEsat
collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector-emitter saturation
IC= 2 A; IB= 900 mA; see Fig.8 − 1V
voltage
V
F
diode forward voltage
IF=2A − 1.8 V
(BU505DF)
I
Csat
I
C
I
CM
P
tot
t
f
collector saturation current − 2A
collector current (DC) see Figs 4 and 5 − 2.5 A
collector current (peak value) see Figs 4 and 5 − 4A
total power dissipation Th≤ 25 °C; see Fig.2 − 20 W
fall time inductive load; see Fig.10 0.7 −µs
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1 6.35 K/W
note 2 3.85 K/W
R
th j-a
thermal resistance from junction to ambient 55 K/W
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
1997 Aug 13 2
Philips Semiconductors Product specification
Silicon diffused power transistors BU505F; BU505DF
ISOLATION CHARACTERISTICS
SYMBOL PARAMETER TYP. MAX. UNIT
V
isolM
C
isol
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink 12 − pF
collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector saturation current − 2A
collector current (DC) see Figs 4 and 5 − 2.5 A
collector current (peak value) see Figs 4 and 5 − 4A
base current (DC) − 2A
base current (peak value) − 4A
total power dissipation Th≤ 25 °C; see Fig.2 − 20 W
storage temperature −65 +150 °C
junction temperature − 150 °C
120
handbook, halfpage
P
tot max
(%)
80
40
0
050
100 150
Fig.2 Power derating curve.
MGK674
o
T
(
C)
h
2
10
handbook, halfpage
h
FE
10
1
−2
10
Tj=25°C.
(1) VCE=5V.
(2) VCE=1V.
Fig.3 DC current gain; typical values.
MGB875
(1)
(2)
−1
10
1
IC (A)
10
1997 Aug 13 3
Philips Semiconductors Product specification
Silicon diffused power transistors BU505F; BU505DF
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
V
CEsat
V
BEsat
V
F
I
CES
I
EBO
h
FE
f
T
C
c
collector-emitter sustaining voltage IC= 0.1 A; IB= 0; L = 25 mH;
see Figs 6 and 7
collector-emitter saturation voltage IC= 2 A; IB= 900 mA;
see Fig.8
base-emitter saturation voltage IC= 2 A; IB= 900 mA;
see Fig.9
diode forward voltage (BU505DF) IF=2A −−1.8 V
collector-emitter cut-off current VCE=V
CESmax
; VBE=0;
note 1
V
CE=VCESmax
; VBE=0;
Tj= 125 °C; note 1
emitter-base cut-off current VEB=5V; IC=0 −−1mA
DC current gain see Fig.3
V
= 5 V; IC= 2 A 2.22 −−
CE
= 5 V; IC= 100 mA 6 13 30
V
CE
transition frequency VCE=5V; IC= 100 mA;
f = 1 MHz
collector capacitance VCB=10V; IE=ie=0;
f = 1 MHz
700 −−V
−−1V
−−1.3 V
−−0.15 mA
−−1mA
− 7 − MHz
− 65 − pF
Switching times in horizontal deflection circuit (see Fig.4)
t
s
storage time ICM= 2 A; I
Vdr= −4V
L
=10µH − 6.5 −µs
B
=15µH − 7.5 −µs
L
B
L
=25µH − 9.5 −µs
B
t
f
fall time ICM= 2 A; I
Vdr= −4V
L
=10µH − 0.9 −µs
B
=15µH − 0.9 −µs
L
B
L
=25µH − 0.85 −µs
B
Note
1. Measured with a half-sinewave voltage (curve tracer).
B(end)
B(end)
= 900 mA;
= 900 mA;
1997 Aug 13 4
Loading...