Philips BU505F, BU505DF Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BU505F; BU505DF

Silicon diffused power transistors

Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06

1997 Aug 13

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

DESCRIPTION

High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
The BU505DF has an integrated
efficiency diode.

2

2

APPLICATIONS

• Horizontal deflection circuits of
colour television receivers.

PINNING

123

1

MBB008

3

a. BU505F. b. BU505DF.

1

MBB077

3

PIN DESCRIPTION

1 base

Front view

MBC668

2 collector
3 emitter

mb mounting base; electrically

Fig.1 Simplified outline (SOT186) and symbols.

isolated from all pins

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CEO

V

CEsat

collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector-emitter saturation

IC= 2 A; IB= 900 mA; see Fig.8 − 1V

voltage

V

F

diode forward voltage

IF=2A − 1.8 V

(BU505DF)

I

Csat

I

C

I

CM

P

tot

t

f

collector saturation current − 2A
collector current (DC) see Figs 4 and 5 − 2.5 A
collector current (peak value) see Figs 4 and 5 − 4A
total power dissipation Th≤ 25 °C; see Fig.2 − 20 W
fall time inductive load; see Fig.10 0.7 −µs

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

thermal resistance from junction to external heatsink note 1 6.35 K/W

note 2 3.85 K/W

R

th j-a

thermal resistance from junction to ambient 55 K/W

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

1997 Aug 13 2

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER TYP. MAX. UNIT

V

isolM

C

isol

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

Csat

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink 12 − pF

collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector saturation current − 2A
collector current (DC) see Figs 4 and 5 − 2.5 A
collector current (peak value) see Figs 4 and 5 − 4A
base current (DC) − 2A
base current (peak value) − 4A
total power dissipation Th≤ 25 °C; see Fig.2 − 20 W
storage temperature −65 +150 °C
junction temperature − 150 °C

120

handbook, halfpage

P

tot max

(%)

80

40

0

050

100 150

Fig.2 Power derating curve.

MGK674

o

T

(

C)

h

2

10

handbook, halfpage

h

FE

10

1

−2

10

Tj=25°C.
(1) VCE=5V.
(2) VCE=1V.

Fig.3 DC current gain; typical values.

MGB875

(1)

(2)

−1

10

1

IC (A)

10

1997 Aug 13 3

Philips Semiconductors Product specification

Silicon diffused power transistors BU505F; BU505DF

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

V

CEsat

V

BEsat

V

F

I

CES

I

EBO

h

FE

f

T

C

c

collector-emitter sustaining voltage IC= 0.1 A; IB= 0; L = 25 mH;

see Figs 6 and 7

collector-emitter saturation voltage IC= 2 A; IB= 900 mA;

see Fig.8

base-emitter saturation voltage IC= 2 A; IB= 900 mA;

see Fig.9
diode forward voltage (BU505DF) IF=2A −−1.8 V
collector-emitter cut-off current VCE=V

CESmax

; VBE=0;

note 1

V

CE=VCESmax

; VBE=0;

Tj= 125 °C; note 1
emitter-base cut-off current VEB=5V; IC=0 −−1mA
DC current gain see Fig.3

V

= 5 V; IC= 2 A 2.22 −−

CE

= 5 V; IC= 100 mA 6 13 30

V

CE

transition frequency VCE=5V; IC= 100 mA;

f = 1 MHz
collector capacitance VCB=10V; IE=ie=0;

f = 1 MHz

700 −−V

−−1V

−−1.3 V

−−0.15 mA

−−1mA

− 7 − MHz

− 65 − pF

Switching times in horizontal deflection circuit (see Fig.4)
t

s

storage time ICM= 2 A; I

Vdr= −4V

L

=10µH − 6.5 −µs

B

=15µH − 7.5 −µs

L

B

L

=25µH − 9.5 −µs

B

t

f

fall time ICM= 2 A; I

Vdr= −4V

L

=10µH − 0.9 −µs

B

=15µH − 0.9 −µs

L

B

L

=25µH − 0.85 −µs

B

Note

1. Measured with a half-sinewave voltage (curve tracer).

B(end)

B(end)

= 900 mA;

= 900 mA;

1997 Aug 13 4