Philips BU505D, BU505 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BU505; BU505D
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors Product specification
Silicon diffused power transistors BU505; BU505D
DESCRIPTION
High-voltage, high-speed switching
NPN power transistor in a TO-220AB
package. The BU505D has an
integrated efficiency diode.
2
2
APPLICATIONS
1
1
• Horizontal deflection circuits of
colour television receivers.
PINNING
123
MBK106
MBB008
3
MBB077
a. BU505. b. BU505D.
3
PIN DESCRIPTION
1 base
2 collector; connected to
mounting base
Fig.1 Simplified outline (TO-220AB) and symbols.
3 emitter
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
V
CEsat
collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector-emitter saturation
IC= 2 A; IB= 900 mA − 1V
voltage
V
F
diode forward voltage
IF=2A − 1.8 V
(BU505D)
I
Csat
I
C
I
CM
P
tot
t
f
collector saturation current − 2A
collector current (DC) see Fig.3 − 2.5 A
collector current (peak value) see Fig.3 − 4A
total power dissipation Tmb≤ 25 °C; see Fig.4 − 75 W
fall time inductive load; see Fig.7 0.9 −µs
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
thermal resistance from junction to mounting base 1.67 K/W
1997 Aug 13 2
Philips Semiconductors Product specification
Silicon diffused power transistors BU505; BU505D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector saturation current − 2A
collector current (DC) see Fig.3 − 2.5 A
collector current (peak value) see Fig.3 − 4A
base current (DC) − 2A
base current (peak value) − 4A
total power dissipation Tmb≤ 25 °C; see Fig.4 − 75 W
storage temperature −65 +150 °C
junction temperature − 150 °C
10
handbook, full pagewidth
Z
th j−mb
(K/W)
δ = 1
0.75
0.50
1
0.33
0.20
0.10
0.05
−1
10
−2
10
−2
10
0.02
0.01
0
−1
10
110
Fig.2 Transient thermal impedance.
MGB859
2
t
(ms)
p
10
1997 Aug 13 3
Philips Semiconductors Product specification
Silicon diffused power transistors BU505; BU505D
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
V
CEsat
V
BEsat
V
EBO
V
F
I
CES
I
EBO
h
FE
f
T
C
c
collector-emitter sustaining voltage see Figs 5 and 6 700 −−V
collector-emitter saturation voltage IC= 2 A; IB= 900 mA −−1V
base-emitter saturation voltage IC= 2 A; IB= 900 mA −−1.3 V
emitter-base voltage IE= 10 mA; IC=0 − 6 − V
diode forward voltage (BU505D) IF=2A −−1.8 V
collector-emitter cut-off current VCE=V
CESmax
; VBE=0;
−−0.15 mA
note 1
V
CE=VCESmax
; VBE=0;
−−1mA
Tj= 125 °C; note 1
emitter-base cut-off current VEB=5V; IC=0 −−1mA
DC current gain VCE=5V; IC= 100 mA 6 13 30
transition frequency VCE=5V; IC= 100 mA;
− 7 − MHz
f=5MHz
collector capacitance VCB= 10 V; IE=ie=0;
− 65 − pF
f=1MHz
Switching times in horizontal deflection circuit (see Fig.7)
t
s
storage time ICM= 2 A; I
Vdr= −4V
L
=10µH − 6.5 −µs
B
L
=15µH − 7.5 −µs
B
L
=25µH − 9.5 −µs
B
t
f
fall time ICM= 2 A; I
Vdr= −4V
L
=10µH − 0.9 −µs
B
L
=15µH − 0.9 −µs
B
=25µH − 0.85 −µs
L
B
Note
1. Measured with a half-sinewave voltage (curve tracer).
B(end)
B(end)
= 900 mA;
= 900 mA;
1997 Aug 13 4
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