Philips BU4540AL Datasheet
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4540AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
I
P
V
I
t
C
CM
Csat
f
CESM
CEO
tot
CEsat
Collector-emitter voltage peak value VBE = 0 - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 25 A
Collector current peak value - 40 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 16.0 A; IB = 4 A - 3.0 V
Collector saturation current f = 32kHz 16 - A
f = 110kHz 8 - A
Storage time I
= 16 A; f = 32kHz t.b.f t.b.f µs
Csat
I
= 8 A; f = 110kHz t.b.f t.b.f µs
Csat
PINNING - SOT430 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
c
b
3 emitter
heat collector
sink
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
B(AV)
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 25 A
Collector current peak value - 40 A
Base current (DC) - 10 A
Base current peak value - 15 A
Reverse base current average over any 20 ms period - 200 mA
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
e
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
January 1998 1 Rev 1.000
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 35 - K/W
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4540AL
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
V
h
h
EBO
CEsat
BEsat
FE
FE
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Base-emitter breakdown voltage IB = 1 mA 7.5 14 - V
Collector-emitter saturation voltage IC = 16 A; IB = 4 A - - 3.0 V
Base-emitter saturation voltage IC = 16 A; IB = 4 A t.b.f - 1.0 V
DC current gain IC = 1A; VCE = 5 V - t.b.f -
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (32 kHz line I
t
s
t
f
t
s
t
f
deflection dynamic test circuit).
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
Switching times (110 kHz line I
deflection dynamic test circuit).
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
IC = 16 A; VCE = 5 V 4.2 5.35 6.5
= 16 A;IB1 = 3.2 A; (IB2 = -8A)
Csat
= 8 A;IB1 = 1.6 A; (IB2 = -4.8A)
Csat
1 Measured with half sine-wave voltage (curve tracer).
January 1998 2 Rev 1.000
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