Philips BU4530AX Datasheet
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4530AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
I
P
V
I
t
C
CM
Csat
f
CESM
CEO
tot
CEsat
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 16 A
Collector current peak value - 40 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 10 A; IB = 2.5 A - 3.0 V
Collector saturation current f = 32kHz 10 - A
f = 90kHz 8.0 - A
Fall time I
= 10.0 A; f = 32kHz t.b.f t.b.f µs
Csat
I
= 8.0 A; f = 90kHz t.b.f t.b.f µs
Csat
PINNING - SOT399 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
case
c
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 16 A
Collector current peak value - 40 A
Base current (DC) - 10 A
Base current peak value - 15 A
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
123
e
-10A
1 Turn-off current.
January 1998 1 Rev 1.000
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4530AX
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
CEOsust
EBO
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 14 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
V
V
h
h
CEsat
BEsat
FE
FE
Collector-emitter saturation voltage IC = 10 A; IB = 2.5 A - - 3.0 V
Base-emitter saturation voltage IC = 10 A; IB = 2.5 A t.b.f - 1.1 V
DC current gain IC = 1A; VCE = 5 V - t.b.f -
IC = 10 A; VCE = 5 V 4.2 5.35 6.5
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF
Switching times (32 kHz line I
deflection circuit)
= 10 A;IB1 = 2 A;(IB2 = -5 A)
Csat
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
Switching times (90 kHz line I
deflection circuit)
= 8 A;IB1 = 1.6 A;(IB2 = -4.8 A)
Csat
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
2 Measured with half sine-wave voltage (curve tracer).
January 1998 2 Rev 1.000
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