Philips BU4525AW Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4525AW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 14 A
Collector current peak value - 30 A
Total power dissipation Ths ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 9.0 A; IB = 2.25 A - 3.0 V
Collector saturation current f = 16 kHz 9.0 - A
f = 70 kHz 7.0 - A
Fall time I
= 9.0 A;f = 16 kHz 0.4 0.55 µs
Csat
I
= 7.0 A;f = 70 kHz 0.15 - µs
Csat
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 14 A
Collector current peak value - 30 A
Base current (DC) - 8 A
Base current peak value - 12 A
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 125 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
2
1
3
e
-7A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 1 K/W
Junction to ambient in free air 45 - K/W
May 1998 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4525AW
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
EBO
Collector cut-off current
Emitter cut-off current VEB = 6.0 V; IC = 0 A - - 100 µA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
Collector-emitter saturation voltage IC = 9.0 A;IB = 2.25A - - 3.0 V
Base-emitter saturation voltage IC = 9.0 A;IB = 2.25A 0.96 1.01 1.06 V
DC current gain IC = 1.0 A; VCE = 5 V - 12 -
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF
Switching times (16 kHz line I
deflection circuit) (IB2 = -4.5 A)
Turn-off storage time 3.7 4.5 µs
Turn-off fall time 0.4 0.55 µs
Switching times (70 kHz line I
deflection circuit) (IB2 = -4.5 A)
Turn-off storage time 2 - µs
Turn-off fall time 0.15 - µs
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 9.0 A; VCE = 5 V 4.2 5.8 7.6
= 9.0 A;IB1 = 1.8 A
Csat
= 7.0 A;IB1 = 1.4 A
Csat
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
CEOsust
.
100-200R
Horizontal
Oscilloscope
Vertical
100R
30-60 Hz
6V
Fig.1. Test circuit for V
2 Measured with half sine-wave voltage (curve tracer).
1R
CEOsust
+ 50v
. Fig.2. Oscilloscope display for V
May 1998 2 Rev 1.000
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