Philips BU4525AL Datasheet
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4525AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
I
P
V
I
t
C
CM
Csat
f
CESM
CEO
tot
CEsat
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 9.0 A; IB = 2.25A - 3.0 V
Collector saturation current f= 16 kHz 8.0 - A
f= 70 kHz 7.5 - A
Fall time I
= 9.0 A; f = 16 kHz t.b.f t.b.f µs
Csat
I
= 7.5 A; f = 70 kHz t.b.f t.b.f µs
Csat
PINNING - SOT430 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
c
b
3 emitter
heat collector
sink
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 8 A
Base current peak value - 12 A
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
e
-7A
1 Turn-off current.
January 1998 1 Rev 1.000
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4525AL
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VBE = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 9.0 A;IB = 2.25 A; - - 3.0 V
Base-emitter saturation voltage IC = 9.0 A;IB = 2.25 A; t.b.f - 1.1 V
DC current gain IC = 1A; VCE = 5 V - t.b.f -
IC = 9 A; VCE = 5 V 4.2 5.35 6.5
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF
Switching times (16 kHz line I
deflection circuit) (IB2 = -4.5 A)
= 9.0 A;IB1 = 1.8 A;
Csat
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
Switching times (70kHz line I
deflection circuit) (IB2 = -4.5 A)
= 7.5 A;IB1 = 1.5 A
Csat
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
2 Measured with half sine-wave voltage (curve tracer).
January 1998 2 Rev 1.000
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