Philips BU4523AW Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4523AW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 11 A
Collector current peak value - 29 A
Total power dissipation Ths ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 8 A; IB = 2 A - 3.0 V
Collector saturation current. f = 16 kHz 8 - A
f = 70 kHz 6.5 - A
Fall time I
= 8 A; f = 16 kHz 0.3 0.4 µs
Csat
I
= 6.5 A; f = 70 kHz 0.14 - µs
Csat
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 11 A
Collector current peak value - 29 A
Base current (DC) - 7 A
Base current peak value - 10 A
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 125 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
2
1
3
e
-7A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - 1 K/W
Junction to ambient in free air 45 - K/W
May 1998 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4523AW
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
EBO
Collector cut-off current
Emitter cut-off current VEB = 6 V; IC = 0 A - - 100 µA
Emitter-base breakdown voltage IB = 1 mA 7.5 12.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
Collector-emitter saturation voltage IC = 8 A; IB = 2 A - - 3.0 V
Base-emitter saturation voltage IC = 8 A; IB = 2 A 0.85 0.95 1.1 V
DC current gain IC = 1 A; VCE = 5 V - 14 -
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line I
deflection circuit) (IB2 = -4.0 A)
t
s
t
f
t
s
t
f
Turn-off storage time 4.5 5.5 µs
Turn-off fall time 0.30 0.40 µs
Switching times (70 kHz line I
deflection circuit) (IB2 = -3.9 A)
Turn-off storage time 2.3 - µs
Turn-off fall time 0.14 - µs
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 8 A; VCE = 5 V 4.2 5.8 7.3
= 8.0 A;IB1 = 1.6 A
Csat
= 6.5 A;IB1 = 1.3 A
Csat
100-200R
Horizontal
Oscilloscope
Vertical
100R
30-60 Hz
6V
Fig.1. Test circuit for V
2 Measured with half sine-wave voltage (curve tracer).
1R
CEOsust
+ 50v
IC / mA
250
200
100
0
VCE / V
VCEOsust
. Fig.2. Oscilloscope display for V
min
CEOsust
.
May 1998 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4523AW
ICsat
t
IB1
t
IB2
t
VCE
TRANSISTOR
IC
IB
DIODE
26us20us
64us
Fig.3. Switching times waveforms (16 kHz).
TRANSISTOR
IC
IB
DIODE
7.1us2.5us
ICsat
t
IB1
t
IB2
IBend
-VBB
LB
T.U.T.
Fig.6. Switching times test circuit
hFE
100
VCE = 1 V
10
+ 150 v nominal
adjust for ICsat
Lc
Cfb
.
BU4523AF/X
Ths = 25 C
Ths = 85 C
14.2us
VCE
t
Fig.4. Switching times waveforms (70 kHz).
ICsat
90 %
IC
10 %
IB
ts
IB1
tf
t
t
- IB2
Fig.5. Switching times definitions.
1
0.01 0.1 1 10 100
IC / A
Fig.7. High and low DC current gain.
hFE
100
VCE = 5 V
10
1
0.01 0.1 1 10 100
BU4523AF/X
Ths = 25 C
Ths = 85 C
IC / A
Fig.8. High and low DC current gain.
May 1998 3 Rev 1.000
Loading...