Philips bu4522af DATASHEETS
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4522AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of colour TV receivers and PC monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT199 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 7 A; IB = 1.75 A - 3.0 V
Collector saturation current (Fig 17) f = 16 kHz 7 - A
f = 64 kHz 6 - A
Fall time I
= 7 A; f = 16 kHz 285 400 ns
Csat
I
= 6 A; f = 64 kHz 170 230 ns
Csat
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Base current (DC) - 6 A
Base current peak value - 9 A
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
12
3
e
-6A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
December 1997 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4522AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 7 A; IB = 1.75 A - - 3.0 V
Base-emitter saturation voltage IC = 7 A; IB = 1.75 A 0.85 0.94 1.03 V
DC current gain IC = 1 A; VCE = 5 V - 10 -
IC = 7 A; VCE = 5 V 4.2 5.8 7.3
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line f = 16 kHz; I
deflection circuit) (IB2 = -3.5 A)
t
s
t
f
Turn-off storage time 3.5 4.3 µs
Turn-off fall time 285 400 ns
Switching times (64 kHz line f = 64 kHz; I
deflection circuit) (IB2 = -3.6 A)
t
s
t
f
Turn-off storage time 2.3 2.7 µs
Turn-off fall time 170 230 ns
= 7 A; IB1 = 1.4 A;
Csat
= 6 A; IB1 = 1.2 A;
Csat
2 Measured with half sine-wave voltage (curve tracer).
December 1997 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4522AF
30-60 Hz
IC / mA
250
200
100
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
I
TRANSISTOR
C
DIODE
ICsat
t
I
B
IB1
t
6.5 us5 us
IB2
16 us
V
CE
t
Fig.4. Switching times waveforms (64 kHz).
ICsat
90 %
IC
10 %
IB
ts
IB1
tf
t
0
VCE / V
Fig.2. Oscilloscope display for V
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
min
VCEOsust
CEOsust
ICsat
IB1
IB2
.
t
t
t
Fig.3. Switching times waveforms (16 kHz).
IBend
-VBB
- IB2
Fig.5. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
LB
T.U.T.
Cfb
Fig.6. Switching times test circuit
t
.
December 1997 3 Rev 1.000
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