Philips BU4515DX Datasheet
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4515DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
I
P
V
I
V
t
C
CM
Csat
f
CESM
CEO
tot
CEsat
F
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 9 A
Collector current peak value - 20 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 5.0 A; IB = 1.25 A - 3.0 V
Collector saturation current f = 16kHz 6.0 - A
f = 64kHz t.b.f - A
Diode forward voltage IF = 6 A 1.7 2.0 V
Fall time I
= 6A; f = 16kHz t.b.f t.b.f µs
Csat
f = 64kHz t.b.f t.b.f µs
PINNING - SOT399 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
case
c
b
3 emitter
case isolated
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 9 A
Collector current peak value - 20 A
Base current (DC) - 5 A
Base current peak value - 7.5 A
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
Rbe
e
-6A
1 Turn-off current.
July 1998 1 Rev 1.000
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4515DX
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
BV
EBO
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 7.5 V - 45 - Ω
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Collector-emitter saturation voltages IC = 6.0 A; IB = 1.5 A - - 3.0 V
Base-emitter saturation voltage IC = 6.0 A; IB = 1.5 A t.b.f t.b.f t.b.f V
DC current gain IC = 500 mA; VCE = 5 V - t.b.f -
IC = 6.0 A; VCE = 5 V 4.2 5.7 7.3
Diode forward voltage IF = 6 A - 1.7 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
t
s
t
f
2 Measured with half sine-wave voltage (curve tracer).
July 1998 2 Rev 1.000
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (16 kHz line I
deflection circuit) (IB2 = -3.0 A)
= 6.0 A;IB1 = 1.2 A
Csat
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
Switching times (64 kHz line I
deflection circuit)
Csat
= t.b.f
Turn-off storage time t.b.f t.b.f µs
Turn-off fall time t.b.f t.b.f µs
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