Philips BU4515DF Datasheet

Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4515DF

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

V V I I P V I
V t
C CM
Csat
f
CESM CEO
tot CEsat
F
Collector-emitter voltage peak value VBE = 0 V - 1500 V Collector-emitter voltage (open base) - 800 V Collector current (DC) - 9 A Collector current peak value - 20 A Total power dissipation Ths 25 ˚C - 45 W Collector-emitter saturation voltage IC = 5.0 A; IB = 1.25 A - 3.0 V Collector saturation current f = 16kHz 6.0 - A
f = 64kHz t.b.f - A Diode forward voltage IF = 6 A 1.7 2.0 V Fall time I
= 6A; f = 16kHz t.b.f t.b.f µs
Csat
f = 64kHz t.b.f t.b.f µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
1 base 2 collector
case
c
b
3 emitter
case isolated
12
3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
V V I
C
I
CM
I
B
I
BM
-I P T T
CESM CEO
BM tot stg j
Collector-emitter voltage peak value VBE = 0 V - 1500 V Collector-emitter voltage (open base) - 800 V Collector current (DC) - 9 A Collector current peak value - 20 A Base current (DC) - 5 A Base current peak value - 7.5 A Reverse base current peak value
1
Total power dissipation Ths 25 ˚C - 45 W Storage temperature -55 150 ˚C Junction temperature - 150 ˚C
Rbe
e
-6A
1 Turn-off current.
July 1998 1 Rev 1.000
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BU4515DF

THERMAL RESISTANCES

R
th j-hs
R
th j-a

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
V
isol
C
isol

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified
I
CES
I
CES
BV
EBO
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Junction to heatsink with heatsink compound - 2.8 K/W Junction to ambient in free air 35 - K/W
Repetitive peak voltage from all R.H. 65 % ; clean and dustfree - - 2500 V three terminals to external heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V VBE = 0 V; VCE = V Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V Base-emitter resistance VEB = 7.5 V - 45 - Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH Collector-emitter saturation voltages IC = 6.0 A; IB = 1.5 A - - 3.0 V Base-emitter saturation voltage IC = 6.0 A; IB = 1.5 A t.b.f t.b.f t.b.f V DC current gain IC = 500 mA; VCE = 5 V - t.b.f -
IC = 6.0 A; VCE = 5 V 4.2 5.70 7.3 Diode forward voltage IF = 6 A - 1.7 2.0 V

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified
C
c
t
s
t
f
t
s
t
f
2 Measured with half sine-wave voltage (curve tracer).
July 1998 2 Rev 1.000
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF Switching times (16 kHz line I
deflection circuit) (IB2 = -3.0 A)
= 6.0 A;IB1 = 1.2 A
Csat
Turn-off storage time t.b.f t.b.f µs Turn-off fall time t.b.f t.b.f µs
Switching times (64 kHz line I deflection circuit)
Csat
= t.b.f
Turn-off storage time t.b.f t.b.f µs Turn-off fall time t.b.f t.b.f µs
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