Philips bu4508df DATASHEETS
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4508DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT199 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 5.0 A; IB = 1.25 A - 3.0 V
Collector saturation current f = 16kHz 5.0 - A
Diode forward voltage IF = 5 A 1.85 2.2 V
Fall time I
= 5A; f = 16kHz 300 400 ns
Csat
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-5A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
February 1999 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4508DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
BV
EBO
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 6 V - 25 - Ω
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Collector-emitter saturation voltages IC = 5.0 A; IB = 1.25 A - - 3.0 V
Base-emitter saturation voltage IC = 5.0 A; IB = 1.25 A 0.85 0.94 1.03 V
DC current gain IC = 500 mA; VCE = 5 V - 7 -
IC = 5.0 A; VCE = 5 V 4.2 5.7 7.3
Diode forward voltage IF = 5 A - 1.85 2.2 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line I
deflection circuit)
t
s
t
f
V
fr
t
fr
Turn-off storage time 2.75 3.75 µs
Turn-off fall time 300 400 ns
Anti-parallel diode forward recovery IF = 4 A; dIF/dt = 50 A/µs19-V
voltage
Anti-parallel diode forward recovery VF = 5 V 500 - ns
time
= 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A)
Csat
2 Measured with half sine-wave voltage (curve tracer).
February 1999 2 Rev 1.000
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