Philips BU4507DF Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4507DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT199 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 4 A; IB = 1.0 A - 3.0 V
Collector saturation current f = 16kHz 4 - A
Diode forward voltage IF = 4 A 1.7 2.1 V
Fall time I
= 4 A; f = 16kHz 300 400 ns
Csat
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 8 A
Collector current peak value - 15 A
Base current (DC) - 4 A
Base current peak value - 6 A
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-5A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
January 1999 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4507DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
V
CEOsust
BV
EBO
R
be
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
CESMmax
- - 1.0 mA
- - 2.0 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 6 V - 30 - Ω
Collector-emitter saturation voltages IC = 4 A; IB = 1.0 A - - 3.0 V
Base-emitter saturation voltage IC = 4 A; IB = 1.0 A 0.83 0.92 1.01 V
DC current gain IC = 500 mA; VCE = 5 V - 7 -
IC = 4 A; VCE = 5 V 4.2 5.7 7.3
Diode forward voltage IF = 4 A - 1.7 2.1 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line I
deflection circuit)
t
s
t
f
V
fr
Turn-off storage time 3.7 4.6 µs
Turn-off fall time 300 400 ns
Anti-parallel diode forward recovery IF = 4 A; dIF/dt = 50 A/µs 18.5 - V
voltage
t
fr
Anti-parallel diode forward recovery VF = 5 V 500 - ns
time
= 4 A; IB1 = 0.8 A;(IB2 = -2 A)
Csat
2 Measured with half sine-wave voltage (curve tracer).
January 1999 2 Rev 1.000
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