Philips BU4506AF Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4506AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT199 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 5 A
Collector current peak value - 8 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 3 A; IB = 0.75 A - 3.0 V
Collector saturation current f = 16 kHz 3.0 - A
Fall time I
= 3.0 A;f = 16 kHz 300 450 ns
Csat
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
C
I
CM
I
B
I
BM
-I
P
T
T
CESM
CEO
BM
tot
stg
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 5 A
Collector current peak value - 8 A
Base current (DC) - 3 A
Base current peak value - 5 A
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
12
3
e
-4A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 32 - K/W
July 1999 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU4506AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 3.0 A; IB = 0.75 A - - 3.0 V
Base-emitter saturation voltage IC = 3.0 A; IB = 0.75 A 0.8 0.89 0.98 V
DC current gain IC = 0.5 A; VCE = 5 V - 10 -
IC = 3 A; VCE = 5 V 4.2 5.5 7.3
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
t
s
t
f
30-60 Hz
Switching times (16kHz line I
deflection circuit)
Turn-off storage time 3.7 4.6 µs
Turn-off fall time 300 450 ns
+ 50v
. Fig.2. Oscilloscope display for V
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
CEOsust
= 3.0 A; IB1 = 0.6 A; (IB2 = -1.5 A)
Csat
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
CEOsust
.
2 Measured with half sine-wave voltage (curve tracer).
July 1999 2 Rev 1.000
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